SI4948EY

Si4948EY Vishay Siliconix Dual P-Channel 60-V (D-S), 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 0.120 at VGS = - 10 V 0.150 at VGS = - 4.5 V ID (A) ± 3.1 ± 2.8 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFETs 175 °C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/EC S1 1 G1 2 S2 3 G2 4 SO-8 8 D1 7 D1 6 D2 5 D2 Top View Ordering Information: Si4948EY-T1-E3 (Lead (Pb)-free) Si4948EY-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 G1 S2 G2 D1 P-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C)a TA = 25 °C TA = 70 °C ID Pulsed Drain Current IDM Continuous Source Current (Diode Conduction)a IS Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD Operating Junction and Storage Temperature Range TJ, Tstg THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes: a. Surface Mounted on FR4 board, t ≤ 10 s. Symbol RthJA Limit - 60 ± 20 ± 3.1 ± 2.6 ± 30 - 2.0 2.4 1.7 - 55 to 175 Limit 62.5 Unit V A W °C Unit °C/W Document Number: 70166 S09-1389-Rev. F, 20-Jul-09 www.vishay.com 1 Si4948EY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Res...