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SI4955DY Dataheets PDF



Part Number SI4955DY
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Assymetrical Dual P-Channel MOSFETs
Datasheet SI4955DY DatasheetSI4955DY Datasheet (PDF)

New Product Si4955DY Vishay Siliconix Asymmetrical Dual P-Channel 30-V/20-V (D-S) MOSFETs PRODUCT SUMMARY VDS (V) rDS(on) (Ω) Channel-1 - 30 0.054 at VGS = - 10 V 0.100 at VGS = - 4.5 V Channel-2 - 20 0.027 at VGS = - 4.5 V 0.035 at VGS = - 2.5 V 0.048 at VGS = - 1.8 V ID (A) - 5.0 - 3.7 - 7.0 - 6.2 - 5.2 FEATURES • TrenchFET® Power MOSFETs • Low Gate Drive (2.5 V) Capability For Channel 2 APPLICATIONS • Game Station - Load Switch RoHS COMPLIANT S1 1 G1 2 S2 3 G2 4 SO-8 8 D1 7 D1 .

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New Product Si4955DY Vishay Siliconix Asymmetrical Dual P-Channel 30-V/20-V (D-S) MOSFETs PRODUCT SUMMARY VDS (V) rDS(on) (Ω) Channel-1 - 30 0.054 at VGS = - 10 V 0.100 at VGS = - 4.5 V Channel-2 - 20 0.027 at VGS = - 4.5 V 0.035 at VGS = - 2.5 V 0.048 at VGS = - 1.8 V ID (A) - 5.0 - 3.7 - 7.0 - 6.2 - 5.2 FEATURES • TrenchFET® Power MOSFETs • Low Gate Drive (2.5 V) Capability For Channel 2 APPLICATIONS • Game Station - Load Switch RoHS COMPLIANT S1 1 G1 2 S2 3 G2 4 SO-8 8 D1 7 D1 6 D2 5 D2 Top View Ordering Information: Si4955DY-T1-E3 (Lead (Pb)-free) S1 G1 D1 P-Channel MOSFET S2 G2 D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Channel-1 10 sec Steady State Channel-2 10 sec Steady State Drain-Source Voltage VDS - 30 - 20 Gate-Source Voltage VGS ± 20 ±8 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID - 5.0 - 4.0 - 3.8 - 3.0 - 7.0 - 5.6 - 5.3 - 4.2 Pulsed Drain Current IDM - 20 Continuous Source Current (Diode Conduction)a IS - 1.7 - 0.9 - 1.7 - 0.9 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 2.0 1.3 1.1 0.7 2 1.3 1.1 0.7 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 Board. t ≤ 10 sec Steady State Steady State Symbol RthJA RthJF Document Number: 72241 S-61006-Rev. C, 12-Jun-06 Channel-1 Typ Max 55 62.5 90 110 33 40 Channel-2 Typ Max 58 62.5 91 110 34 40 Unit °C/W www.vishay.com 1 Si4955DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA VDS = VGS, ID = - 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V VDS = 0 V, VGS = ± 8 V VDS = - 30 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = - 20 V, VGS = 0 V VDS = - 30 V, VGS = 0 V, TJ = 85 °C VDS = - 20 V, VGS = 0 V, TJ = 85 °C On-State Drain Currenta ID(on) VDS ≥ - 5 V, VGS = - 10 V VDS ≤ - 5 V, VGS = - 10 V VGS = - 10 V, ID = - 5.0 A VGS = - 4.5 V, ID = - 7.0 A Drain-Source On-State Resistancea rDS(on) VGS = - 4.5 V, ID = - 3.7 A VGS = - 2.5 V, ID = - 6.2 A VGS = - 1.8 V, ID = - 3 A Forward Transconductancea gfs VDS = - 15 V, ID = - 5.0 A VDS = - 15 V, ID = - 3 A Diode Forward Voltagea VSD IS = - 1.7 A, VGS = 0 V IS = - 1.7 A, VGS = 0 V Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Channel-1 VDS = - 15 V, VGS = - 10 V, ID = - 5.0 A Qgs Channel-2 Qgd VDS = - 10 V, VGS = - 4.5 V, ID = - 7 A Turn-On Delay Time Rise Time td(on) tr Channel-1 VDD = - 15 V, RL = - 15 Ω ID ≅ - 1 A, VGEN = - 10 V, RG = 6 Ω Turn-Off Delay Time Fall Time td(off) tf Channel-2 VDD = - 10 V, RL = 10 Ω ID ≅ - 1 A, VGEN = - 4.5 V, RG = 6 Ω Source-Drain Reverse Recovery Time trr IF = - 1.7 A, di/dt = 100 A/µs IF = - 1.7 A, di/dt = 1.


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