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Si4955DY
Vishay Siliconix
Asymmetrical Dual P-Channel 30-V/20-V (D-S) MOSFETs
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
Channel-1 - 30
0.054 at VGS = - 10 V 0.100 at VGS = - 4.5 V
Channel-2 - 20
0.027 at VGS = - 4.5 V 0.035 at VGS = - 2.5 V 0.048 at VGS = - 1.8 V
ID (A) - 5.0 - 3.7 - 7.0 - 6.2 - 5.2
FEATURES • TrenchFET® Power MOSFETs • Low Gate Drive (2.5 V) Capability For
Channel 2
APPLICATIONS • Game Station
- Load Switch
RoHS
COMPLIANT
S1 1 G1 2 S2 3 G2 4
SO-8
8 D1 7 D1 6 D2 5 D2
Top View
Ordering Information: Si4955DY-T1-E3 (Lead (Pb)-free)
S1
G1 D1
P-Channel MOSFET
S2 G2
D2 P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Channel-1 10 sec Steady State
Channel-2 10 sec Steady State
Drain-Source Voltage
VDS - 30
- 20
Gate-Source Voltage
VGS
± 20
±8
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 70 °C
ID
- 5.0 - 4.0
- 3.8 - 3.0
- 7.0 - 5.6
- 5.3 - 4.2
Pulsed Drain Current
IDM - 20
Continuous Source Current (Diode Conduction)a
IS
- 1.7
- 0.9
- 1.7
- 0.9
Maximum Power Dissipationa
TA = 25 °C TA = 70 °C
PD
2.0 1.3
1.1 0.7
2 1.3
1.1 0.7
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit V
A
W °C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 Board.
t ≤ 10 sec Steady State Steady State
Symbol
RthJA RthJF
Document Number: 72241 S-61006-Rev. C, 12-Jun-06
Channel-1 Typ Max 55 62.5 90 110 33 40
Channel-2 Typ Max 58 62.5 91 110 34 40
Unit °C/W
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Si4955DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V VDS = 0 V, VGS = ± 8 V
VDS = - 30 V, VGS = 0 V
Zero Gate Voltage Drain Current
IDSS
VDS = - 20 V, VGS = 0 V VDS = - 30 V, VGS = 0 V, TJ = 85 °C
VDS = - 20 V, VGS = 0 V, TJ = 85 °C
On-State Drain Currenta
ID(on)
VDS ≥ - 5 V, VGS = - 10 V VDS ≤ - 5 V, VGS = - 10 V
VGS = - 10 V, ID = - 5.0 A
VGS = - 4.5 V, ID = - 7.0 A
Drain-Source On-State Resistancea
rDS(on)
VGS = - 4.5 V, ID = - 3.7 A
VGS = - 2.5 V, ID = - 6.2 A
VGS = - 1.8 V, ID = - 3 A
Forward Transconductancea
gfs
VDS = - 15 V, ID = - 5.0 A VDS = - 15 V, ID = - 3 A
Diode Forward Voltagea
VSD
IS = - 1.7 A, VGS = 0 V IS = - 1.7 A, VGS = 0 V
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge
Qg Channel-1
VDS = - 15 V, VGS = - 10 V, ID = - 5.0 A Qgs
Channel-2
Qgd VDS = - 10 V, VGS = - 4.5 V, ID = - 7 A
Turn-On Delay Time Rise Time
td(on) tr
Channel-1 VDD = - 15 V, RL = - 15 Ω ID ≅ - 1 A, VGEN = - 10 V, RG = 6 Ω
Turn-Off Delay Time Fall Time
td(off) tf
Channel-2 VDD = - 10 V, RL = 10 Ω ID ≅ - 1 A, VGEN = - 4.5 V, RG = 6 Ω
Source-Drain Reverse Recovery Time
trr
IF = - 1.7 A, di/dt = 100 A/µs IF = - 1.7 A, di/dt = 1.