Dual P-Channel MOSFET
Si4965DY
Vishay Siliconix
Dual P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) -8
RDS(on) (Ω) 0.021 at VGS = - 4...
Description
Si4965DY
Vishay Siliconix
Dual P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) -8
RDS(on) (Ω) 0.021 at VGS = - 4.5 V 0.027 at VGS = - 2.5 V 0.040 at VGS = - 1.8 V
ID (A) - 8.0 - 7.0 - 5.8
FEATURES Halogen-free According to IEC 61249-2-21
Definition TrenchFET® Power MOSFETs: 1.8 V Rated
Compliant to RoHS Directive 2002/95/EC
S1 1 G1 2 S2 3 G2 4
SO-8
8 D1 7 D1 6 D2 5 D2
Top View
Ordering Information: Si4965DY-T1-E3 (Lead (Pb)-free) Si4965DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1 G1
S2 G2
D1 P-Channel MOSFET
D2 P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)a, b
TA = 25 °C TA = 70 °C
ID
Pulsed Drain Current
IDM
Continuous Source Current (Diode Conduction)a, b
IS
Maximum Power Dissipationa, b
TA = 25 °C TA = 70 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit -8 ±8 - 8.0 - 6.4 - 30 - 1.7 2.0 1.3
- 55 to 150
Unit V
A
W °C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Notes: a. Surface Mounted on FR4 board. b. t ≤ 10 s.
t ≤ 10 s Steady State
Symbol RthJA
Typical 93
Maximum 62.5
Unit °C/W
Document Number: 70826 S09-0867-Rev. C, 18-May-09
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Si4965DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IG...
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