DatasheetsPDF.com

SI4966DY

Dual N-Channel MOSFET

Description

Si4966DY Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 0.025 at VGS = 4.5 V 0.035 at VGS = 2.5 V ID (A) ± 7.1 ± 6.0 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC S1 1 G1 2 S2 3 G2 4 SO-8 Top View 8 D1 7 D1...

Vishay Siliconix

Download SI4966DY Datasheet

Similar Datasheet

SI4966DY Dual N-Channel MOSFET - Vishay Siliconix

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)