SI4967DY

Si4967DY Vishay Siliconix Dual P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.023 at VGS = - 4.5 V - 12 0.030 at VGS = - 2.5 V 0.045 at VGS = - 1.8 V ID (A) - 7.5 - 6.7 - 5.4 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFETs: 1.8 V Rated Compliant to RoHS Directive 2002/95/EC S1 1 G1 2 S2 3 G2 4 SO-8 8 D1 7 D1 6 D2 5 D2 Top View Ordering Information: Si4967DY-T1-E3 (Lead (Pb)-free) Si4967DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 G1 D1 P-Channel MOSFET S2 G2 D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C)a, b TA = 25 °C TA = 70 °C ID Pulsed Drain Current IDM Continuous Source Current (Diode Conduction)a, b IS Maximum Power Dissipationa, b TA = 25 °C TA = 70 °C PD Operating Junction and Storage Temperature Range TJ, Tstg Limit - 12 ±8 - 7.5 - 6.1 - 30 - 1.7 2.0 1.3 - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes: a. Surface Mounted on FR4 board. b. t ≤ 10 s. t ≤ 10 s Steady State Symbol RthJA Typical 93 Maximum 62.5 Unit °C/W Document Number: 70813 S09-0867-Rev. D, 18-May-09 www.vishay.com 1 Si4967DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA Gate-Body Leakag...