SI5315-DS/SI5315-DS(B)
Semiconductor
High Speed IRED
Features
• Colorless transparency lens type • φ5mm(T-13/4) all pla...
SI5315-DS/SI5315-DS(B)
Semiconductor
High Speed IRED
Features
Colorless transparency lens type φ5mm(T-13/4) all plastic mold type
Low power consumption High power, High speed type
Applications
Infrared remote control and free air transmission systems with low forward voltage and comfortable radiation angle requirements in combination with PIN photodiodes or photo
transistors.
Outline Dimensions
STRAIGHT TYPE
5.0±0.2
unit : mm
STOPPER TYPE
5.0±0.2
0.8±0.2
8.6±0.2
0.8±0.2
8.6±0.2
3.4±0.2 0.5 23.0 MIN
1.0 MIN
3.4±0.2 0.5 23.0 MIN
1.0 MIN
2.54NOM
2.54NOM
1
2
5.8
1
2
5.8
PIN Connections 1. Cathode 2. Anode
KLI-0005-000
1
SI5315-DS/SI5315-DS(B)
Absolute maximum ratings
Characteristic
Power Dissipation Forward Current * Peak Forward Current Reverse Voltage Operating Temperature Storage Temperature
2 1
Symbol
PD IF IFP VR Topr Tstg
Ratings
150 100 1 4 -25∼85 -30∼100
Unit
mW mA A V ℃ ℃
260℃ for 5 seconds * Soldering Temperature Tsol *1.Duty ratio = 1/16, Pulse width = 0.1ms *2.Keep the distance more than 2.0mm from PCB to the bottom of IRED package
Electrical Characteristics
Characteristic
Forward Voltage Radiant Intensity Peak Wavelength Spectrum Bandwidth Rise Time Reverse Current
Symbol
VF IE
Test Condition
IF= 50mA IF= 50mA IF= 50mA IF= 50mA IF= 50mA VR=4V IF= 50mA
Min.
30 -
Typ.
1.5 70 875 45 15 ±20
Max.
2.0 10 -
Unit
V mW/Sr nm nm ns uA deg
λP Δλ tr IR
θ /2
1
* Half angle
3
*3. θ1/2 is the off-axis angle where the luminous intensity...