SI5406DC

N-Channel 2.5-V (G-S) MOSFET Si5406DC Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 12 0.020 at VGS = 4.5 V 0.025 at VGS = 2.5 V ID (A) 9.5 8.5 FEATURES Halogen-free According to IEC 61249-2-21 Available TrenchFET® Power MOSFETs: 2.5 V Rated Low Thermal Resistance 1206-8 ChipFET® 1 APPLICATIONS Load/Power Switching for Cell Phones and Pagers PA Switch in Cellular Devices Battery Operated Systems D D D D D D D S G Bottom View Marking Code AC XXX Lot Traceability and Date Code Part # Code G Ordering Information: Si5406DC-T1-E3 (Lead (Pb)-free) Si5406DC-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5 s Steady State Drain-Source Voltage VDS 12 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 85 °C ID 9.5 6.9 6.8 4.9 Pulsed Drain Current IDM 20 Continuous Source Current (Diode Conduction)a IS 2.1 1.1 Maximum Power Dissipationa TA = 25 °C TA = 85 °C PD 2.5 1.3 1.3 0.7 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Soldering Recommendations (Peak Temperature)b, c 260 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) t≤5s Steady State Steady State RthJA RthJF 40 80 15 50 95 °C/W 20 Notes: a. Surface Mounted on 1" x 1" FR4 board. b. See Reliability Manual for profile. T...