SI5435DC

Si5435DC Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) --30 rDS(on) (Ω) 0.050 @ VGS = --10 V 0.080 @ VGS = --4.5 V ID (A) --5.6 --4.0 1206-8 ChipFETt 1 D D D D S D D G S G Marking Code BE XX Lot Traceability and Date Code D P-Channel MOSFET Part # Code Bottom View Ordering Information: Si5435DC-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Currenta Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c TA = 25_C TA = 85_C TA = 25_C TA = 85_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 secs Steady State --30 20 Unit V --5.6 --4.0 --30 --2.1 2.5 1.3 --55 to 150 260 --4.1 --2.9 --1.1 1.3 0.7 W _C A THERMAL RESISTANCE RATINGS Parameter M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) t ≤ 5 sec Steady State Steady State Symbol RthJA RthJF Typical 40 80 15 Maximum 50 95 20 Unit _C/ C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with ...