SI5443DC

P-Channel 2.5-V (G-S) MOSFET Si5443DC Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.065 at VGS = - 4.5 V - 20 0.074 at VGS = - 3.6 V 0.110 at VGS = - 2.5 V ID (A) ± 4.9 ± 4.6 ± 3.8 FEATURES Halogen-free According to IEC 61249-2-21 Available TrenchFET® Power MOSFETs: 2.5 V Rated 1206-8 ChipFET® 1 D D D D D D S G Bottom View Marking Code BB XX Lot Traceability and Date Code Part # Code Ordering Information: Si5443DC-T1-E3 (Lead-(Pb)-free) Si5443DC-T1-GE3 (Lead-(Pb)-free and Halogen-free) S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5 s Steady State Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 85 °C ID ± 4.9 ± 3.5 ± 3.6 ± 2.6 Pulsed Drain Current IDM ± 15 Continuous Source Currenta IAS - 2.1 - 1.1 Maximum Power Dissipationa TA = 25 °C TA = 85 °C PD 2.5 1.3 1.3 0.7 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Soldering Recommendations (Peak Temperature)b, c 260 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta t≤5s Steady State RthJA 40 80 50 95 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 15 20 Notes: a. Surface Mounted on 1" x 1" FR4 board. b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a res...