SI5935DC

Dual P-Channel 1.8 V (G-S) MOSFET Si5935DC Vishay Siliconix PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) 0.086 at VGS = - 4.5 V 0.121 at VGS = - 2.5 V 0.171 at VGS = - 1.8 V ID (A) - 4.1 - 3.4 - 2.9 1206-8 ChipFET® 1 S1 D1 G1 D1 S2 D2 G2 D2 Marking Code DF XX Lot Traceability and Date Code Part # Code FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFETs Low RDS(on) Dual and Excellent Power Handling in a Compact Footprint Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch PA Switch Battery Switch S1 S2 G1 G2 Bottom View Ordering Information: Si5935DC-T1-E3 (Lead (Pb)-free) Si5935DC-T1-GE3 (Lead (Pb)-free and Halogen-free) D1 P-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c TA = 25 °C TA = 85 °C TA = 25 °C TA = 85 °C VDS VGS ID IDM IS PD TJ, Tstg - 20 ±8 - 4.1 -3 - 2.9 - 2.2 - 15 - 1.8 - 0.9 2.1 1.1 1.1 0.6 - 55 to 150 260 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta t≤5s Steady State RthJA 50 90 60 110 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 30 ...