SI6544DQ

Si6544DQ Vishay Siliconix N- and P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 30 rDS(on) (W) 0.035 @ VGS = 10 V 0.050 @ VGS = 4.5 V ID (A) "4.0 "3.4 "3.5 "2.5 P-Channel –30 0.045 @ VGS = –10 V 0.090 @ VGS = –4.5 V D1 S2 TSSOP-8 D1 S1 S1 G1 1 2 3 4 Top View S1 N-Channel MOSFET D2 P-Channel MOSFET D 8 D2 S2 S2 G2 G1 G2 Si6544DQ 7 6 5 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg N-Channel 30 "20 "4.0 "3.2 "20 1.25 1.0 P-Channel –30 "20 "3.5 "2.8 "20 –1.25 Unit V A W 0.64 –55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70668 S-56944—Rev. C, 23-Nov-98 www.vishay.com S FaxBack 408-970-5600 Symbol RthJA N- or P-Channel 125 Unit _C/W 2-1 Si6544DQ Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V Z G V l D i Current C Zero Gate Voltage Drain IDSS VDS = –30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55_C VDS = –30 V, VGS = 0 V, TJ = 55_C On-State Drain Currenta ID(on) VDS w 5...