Dual P-Channel MOSFET
Si6911DQ
New Product
Vishay Siliconix
Dual P-Channel 12-V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V) rDS(on) (W)
0....
Description
Si6911DQ
New Product
Vishay Siliconix
Dual P-Channel 12-V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V) rDS(on) (W)
0.026 @ VGS = -4.5 V -12 0.035 @ VGS = -2.5 V 0.046 @ VGS = -1.8 V
D TrenchFETr Power MOSFETS ID (A)
-5.1 -4.5 -3.9
APPLICATIONS
D Load Switch D Battery Switch
S1
S2
TSSOP-8
D1 S1 S1 G1 1 2 3 4 Top View Ordering Information: Si6911DQ T-1 D1 P-Channel MOSFET D2 P-Channel MOSFET D 8 D2 7 S2 6 S2 5 G2 G1 G2
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS
10 secs
-12 "8 -5.1
Steady State
Unit
V
-4.3 -3.5 -30 A -0.7 0.83 0.53 -55 to 150 W _C
ID IDM IS PD TJ, Tstg
-4.1
-1.0 1.14 0.73
THERMAL RESISTANCE RATINGS
Parameter
t v 10 sec M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72231 S-31064—Rev. A, 26-May-03 www.vishay.com Steady State Steady State RthJA RthJF
Symbol
Typical
86 124 59
Maximum
110 150 75
Unit
_C/W
1
Si6911DQ
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(...
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