SI7336DP

Si7336DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.00325 @ VGS = 10 V 0.0042 @ VGS = 4.5 V ID (A) 30 27 Qg (Typ) 36 D Ultra-Low On-Resistance Using High Density TrenchFETr Gen II Power MOSFET Technology D Qg Optimized D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D 100% Rg Tested APPLICATIONS D Low-Side DC/DC Conversion − Notebook − Server − Workstation D Synchronous Rectifier, POL PowerPAK SO-8 6.15 mm S 1 2 S 3 S 5.15 mm D 4 D 8 7 D 6 D 5 D G G Bottom View Ordering Information: Si7336DP-T1 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Avalanche Current Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 1.0 mH TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS IAS PD TJ, Tstg 10 secs 30 "20 30 25 70 4.5 50 5.4 3.4 Steady State Unit V 18 15 A 1.8 1.9 1.2 −55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambienta Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72415 S-41795—Rev. C, 04-Oct-04 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJC Typical 18 50 1.0 Maximum 23 65 1.5 Unit _C/W 1 Si7336DP Vishay Silico...