P-Channel MOSFET
P-Channel 20-V (D-S) MOSFET
Si7411DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.019 at VGS = - 4.5 V - ...
Description
P-Channel 20-V (D-S) MOSFET
Si7411DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.019 at VGS = - 4.5 V - 20 0.025 at VGS = - 2.5 V
0.034 at VGS = - 1.8 V
ID (A) - 11.4 - 9.9 - 8.5
PowerPAK 1212-8
FEATURES
Halogen-free According to IEC 61249-2-21 Available
TrenchFET® Power MOSFET: 1.8 V Rated New PowerPAK® Package
- Low Thermal Resistance, RthJC - Low 1.07 mm Profile
APPLICATIONS
Load Switch
3.30 mm
S 1S
3.30 mm
2 S
3G
4
D
8D 7 D 6 D 5
Bottom View
Ordering Information: Si7411DN-T1-E3 (Lead (Pb)-free) Si7411DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
S G
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS - 20
Gate-Source Voltage
VGS
±8
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 85 °C
ID
- 11.4 - 8.2
- 7.5 - 5.4
Pulsed Drain Current
IDM - 30
Continuous Source Current (Diode Conduction)a
IS - 3 - 1.3
Maximum Power Dissipationa
TA = 25 °C TA = 85 °C
PD
3.6 1.9
1.5 0.8
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Soldering Recommendations (Peak Temperature)b, c
260
Unit V
A
W °C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta Maximum Junction-to-Case
t ≤ 10 s Steady State Steady State
RthJA RthJC
28 65 2.9
35 81 °C/W 3.8
Notes: a. Surface Mounted on 1" x 1" FR4 board. b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-...
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