SI7413DN

P-Channel 20-V (D-S) MOSFET Si7413DN Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.015 at VGS = - 4.5 V - 20 0.020 at VGS = - 2.5 V 0.029 at VGS = - 1.8 V ID (A) - 13.2 - 11.4 - 9.5 PowerPAK 1212-8 3.30 mm D 8D 7 D 6 S 1S 2 D 5 Bottom View 3.30 mm S 3 G 4 Ordering Information: Si7413DN-T1-E3 (Lead (Pb)-free) Si7413DN-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES Halogen-free According to IEC 61249-2-21 Available TrenchFET® Power MOSFET New PowerPAK® Package - Low Thermal Resistance, RthJC - Low 1.07 mm Profile APPLICATIONS Load Switch S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 85 °C ID - 13.2 - 9.5 - 8.4 - 6.1 Pulsed Drain Current IDM - 30 Continuous Source Current (Diode Conduction)a IS - 3.2 - 1.3 Maximum Power Dissipationa TA = 25 °C TA = 85 °C PD 3.8 2.0 1.5 0.8 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Soldering Recommendations (Peak Temperature)b, c 260 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta Maximum Junction-to-Case t ≤ 10 s Steady State Steady State RthJA RthJC 26 65 1.9 33 81 °C/W 2.4 Notes: a. Surface Mounted on 1" x 1" FR4 board. b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadle...