SI7447DP

Si7447DP New Product Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -30 FEATURES ID (A) -24 rDS(on) (W) 0.006 @ VGS = -10 V D TrenchFETr Power MOSFETS D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile APPLICATIONS D Battery and Load Switching - Notebook Computers - Notebook Battery Packs PowerPAKt SO-8 S 6.15 mm S 1 2 3 S S 5.15 mm G G 4 D 8 7 6 5 D D D D Bottom View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID - 19 IDM IS -4.5 5.4 3.4 -55 to 150 -60 -1.6 1.9 1.2 W _C -1 1 A Symbol VDS VGS 10 secs Steady State -30 "25 Unit V -24 -14 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71970 S-21475—Rev. A, 26-Aug-02 www.vishay.com Steady State Steady State RthJA RthJC Symbol Typical 18 50 1.0 Maximum 23 65 1.5 Unit _C/W 1 Si7447DP Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "20 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "25 V VDS = -24 V, VGS = 0 V Z...