SBC557

Semiconductor SBC557 PNP Silicon Transistor Descriptions General purpose application Switching application Features High voltage : VCEO=-45V Complementary pair with SBC547 Ordering Information Type NO. SBC557 Marking SBC557 Package Code TO-92 Outline Dimensions 3.45±0.1 4.5±0.1 2.25±0.1 unit : mm 4.5±0.1 0.4±0.02 2.06±0.1 14.0±0.40 1.27 Typ. 2.54 Typ. 1 2 3 1.20±0.1 0.38 PIN Connections 1. Collector 2. Base 3. Emitter KST-2010-000 1 SBC557 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature (Ta=25°C) Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings -50 -45 -5 -100 625 150 -55~150 Unit V V V mA mW °C °C Electrical Characteristics Characteristic Collector-Emitter breakdown voltage Base -Emitter turn on voltage Base -Emitter saturation voltage Collector-Emitter saturation voltage Collector cut-off current DC current gain Transition frequency Collector output capacitance Noise Figure (Ta=25°C) Symbol BVCEO VBE(ON) VBE(sat) VCE(sat) ICBO hFE* fT Cob NF Test Condition IC=-2mA, IB=0 VCE=-5V, IC=-2mA IC=-100mA, IB=-5mA IC=-100mA, IB=-5mA VCB=-35V, IE= 0 VCE=-5V, IC=-2mA VCB=-5V, IC=-10mA VCB=-10V, IE=0, f=1MHz VCE=-5V, IC=-200µA, f=1KHz,Rg=2KΩ Min. Typ. Max. -45 110 -900 150 -700 -650 -15 800 4.5 10 Unit V mV mV mV nA MHz pF dB * : hFE rank / A : 110 ~ 220, B : 200 ~ 450, C : 420 ~ 800 KST-2010-000 2 SBC557 Elect...