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SBE002

Sanyo Semicon Device

50V/ 1A Rectifier

Ordering number:ENN6343 Schottky Barrier Diode SBE002 50V, 1A Rectifier Applications · High frequency rectification (s...


Sanyo Semicon Device

SBE002

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Description
Ordering number:ENN6343 Schottky Barrier Diode SBE002 50V, 1A Rectifier Applications · High frequency rectification (switching regulators, converters, choppers). Package Dimensions unit:mm 1295 [SBE002] 2.9 6 5 4 0.6 0.05 1.6 2.8 0.15 · Low forward voltage (VF max=0.55V). · Fast reverse recovery time (trr max=10ns). · Low switching noise. · Low leakage current and high reliability due to highly reliable planar structure. · Ultrasmall package, permitting SBE002-applied sets to be compact and slim (mounting height 0.9mm). · Large allowable power dissipation. 1 2 0.4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle Conditions 0.7 0.9 0.2 3 0.95 0.6 1 : Cathode 2 : Cathode 3 : No Contact 4 : Anode 5 : Cathode 6 : Cathode SANYO : CPH6 Ratings 50 55 1 10 –55 to +125 –55 to +125 0.2 Features Unit V V A A ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time Thermal Resistance Symbol VR VF IR C trr Rthj-a IR=300µA IF=1A VR=25V VR=10V, f=1MHz IF=IR=100mA, See specified Test Circuit. Mounted on a ceramic board (600mm2×0.8mm) Conditons Ratings min 50 0.55 80 52 10 110 typ max Unit V V µA pF ns ˚C/W Marking : SD Any and all SANYO products des...




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