SBE803

Ordering number:ENN6331 Schottky Barrier Diode SBE803 90V, 200mA Rectifier Applications · High frequency rectification (switching regulators, converters, choppers). Package Dimensions unit:mm 1294 2.9 5 4 3 0.6 [SBE803] 0.2 Features · Low forward voltage (VF max=0.7V). · Fast reverse recovery time (trr max=10ns). · Low switching noise. · Low leakage current and high reliability due to highly reliable planar structure. 0.15 1 0.95 2 0.4 0.6 1.6 2.8 0.05 Specifications Absolute Maximum Ratings at Ta = 25˚C (Value per element) Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle Conditions 0.4 1 : Cathode 2 : Cathode 3 : Anode 4 : No Contact 5 : Anode SANYO : CPH5 0.2 0.7 0.9 Ratings 90 95 200 5 –55 to +125 –55 to +125 Unit V V mA A ˚C ˚C Electrical Characteristics at Ta = 25˚C (Value per element) Parameter Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time Thermal Resistance Symbol VR VF IR C trr Rth(j-a) IR=200µA IF=200mA VR=45V VR=10V, f=1MHz IF=IR=100mA, See specified Test Circuit. Mounted on a ceramic board (600mm2×0.8mm) Conditons Ratings min 90 0.7 50 10 10 110 typ max Unit V V µA pF ns ˚C/W Marking : SB Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extrem...