SBFP420M

Ordering number : 0000000 SBFP420M www.DataSheet4U.com NPN Epitaxial Planar Silicon Transistor SBFP420M UHF to C Band Low-Noise Amplifier Low Phase Noise Osc.Applications Preliminary Features Package Dimensions unit : mm 0000 [SBFP420M] 0.25 Low noise : NF=1.1dB typ (f=1.8GHz). High cut-off frequency : fT=18GHz typ (VCE=1V). : fT=25GHz typ (VCE=3V). Low operating voltage. High gain : S21e2=17dB typ (f=1.8GHz). 0.3 4 3 0.15 1.6 1 1.3 2.0 2 0.25 2.1 0.85 1:Collector 2:Emitter 3:Base 4:Emitter SANYO:MCPH4 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to- Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions Ratings 15 4.5 1.5 35 160 150 --55 to +150 Unit V V V mA mW °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Reverse Transfer Capacitance Forward Transfer Gain Noise Figure Marking:MB Symbol ICBO IEBO hFE fT(1) fT(2) Cre S21e2(1) S21e2(2) NF VCB=5V, IE=0 VEB=1.5V, IC=0 VCE=4V, IC=20mA VCE=1V, IC=10mA VCE=3V, IC=30mA VCB=2V, f=1MHz VCE=2V, IC=5mA, f=1.8GHz VCE=2V, IC=20mA, f=1.8GHz VCE=2V, IC=5mA, f=1.8GHz 50 13 18 12 14 18 25 0.15 15 17 1.1 0.3 Conditions Ratings min typ max 200 35 150 GHz GHz pF dB dB dB Unit nA µA Any and all SANYO products described or contained herein do not have specifications that can h...