Semiconductor
SBT2907AF
PNP Silicon Transistor
Descriptions
• General purpose application • Switching application
Fea...
Semiconductor
SBT2907AF
PNP Silicon
Transistor
Descriptions
General purpose application Switching application
Features
Low Leakage current Low collector saturation voltage enabling low voltage operation Complementary pair with SBT2222AF
Ordering Information
Type NO. SBT2907AF Marking 2F Package Code SOT-23F
Outline Dimensions
2.3~2.5 1.5~1.7
unit : mm
1
1.90 BSC 2.8~3.0
3 2
0.35~0.45 0.1~0.2
PIN Connections 1. Base 2. Emitter 3. Collector
KST-2082-001
0.8~1.0
0~0.1
1
SBT2907AF
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature range * : Package mounted on 99.5% alumina 10×8×0.6mm
Ta=25°C
Symbol
VCBO VCEO VEBO IC PC* Tj Tstg
Ratings
-60 -60 -5 -600 350 150 -55~150
Unit
V V V mA mW °C °C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current DC current gain Collector-Emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Delay time Rise time Turn-off time Storage time Fall time
Ta=25°C
Symbol
BVCBO BVCEO BVEBO ICBO hFE VCE(sat) fT Cob ton td tr toff ts tf
Test Condition
IC=-10µA, IE=0 IC=-1mA, IB=0 IE=-10µA, IC=0 VCB=-60V, IE=0 VCE=-10V, IC=-10mA IC=-150mA, IB=-15mA VCE=-5.0V, IC=-20mA, f=100MHz VCB=-10V, IE=0, f=1MHz VCC=-30Vdc,IC=-150mAdc, IB1=-15mAdc
Min. Typ....