Semiconductor
SBT3906F
PNP Silicon Transistor
Descriptions
• General small signal application • Switching application
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Semiconductor
SBT3906F
PNP Silicon
Transistor
Descriptions
General small signal application Switching application
Features
Low collector saturation voltage Collector output capacitance Complementary pair with SBT3904F
Ordering Information
Type NO. SBT3906F Marking 2A Package Code SOT-23F
Outline Dimensions
2.4±0.1 1.6±0.1
unit : mm
1
2.9±0.1 1.90 BSC
3
0.4±0.05
2
0.15±0.05
KST-2084-001
0.9±0.1
0~0.1
PIN Connections 1. Base 2. Emitter 3. Collector
1
SBT3906F
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature range * : Package mounted on 99.5% alumina 10×8×0.6mm
Ta=25°C
Symbol
VCBO VCEO VEBO IC PC
*
Ratings
-40 -40 -5 -200 350 150 -55~150
Unit
V V V mA mW °C °C
Tj Tstg
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current DC current gain Collector-Emitter saturation voltage Transition frequency Collector output capacitance Delay time Rise time Storage time Fall Time
Ta=25°C
Symbol
BVCBO BVCEO BVEBO ICEX hFE VCE(sat) fT Cob td tr ts tf
Test Condition
IC=-10µA, IE=0 IC=-1mA, IB=0 IE=-10µA, IC=0 VCE=-30V, VEB=-3V VCE=-1V, IC=-10mA IC=-50mA, IB=-5mA VCE=-20V, IC=-10mA, f=100MHz VCB=-5V, IE=0, f=1MHz VCC=-3Vdc, VBE(off)=-0.5Vdc, IC=-10mAdc, IB1=-1mAdc VCC=-3Vdc,IC=-10mAdc, IB1=IB2=-1mAdc
Min.
-40 -4...
