SBT42F

Semiconductor SBT42F NPN Silicon Transistor Descriptions High voltage application Telephone application Features Collector-Emitter voltage VCEO=SBT42F : 300V Complementary pair with SBT92F Ordering Information Type NO. SBT42F Marking M1A Package Code SOT-23F Outline Dimensions unit : mm 2.4±0.1 1.6±0.1 1 2.9±0.1 1.90 BSC 3 0.4±0.05 2 0.15±0.05 PIN Connections 1. Base 2. Emitter 3. Collector KST-2077-000 0.9±0.1 0~0.1 1 SBT42F Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Emitter Current Collector dissipation Junction temperature Storage temperature * ： Package Mounted on 99.5% Alumina 10×8×0.6mm (Ta=25°C) Symbol VCBO VCEO VEBO IC IE PC* Tj Tstg Ratings 300 300 6 500 -500 350 150 -55~150 Unit V V V mA mA mW °C °C Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Base-Emitter saturation voltage Transition frequency Collector output capacitance (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE * * * Test Condition IC=100µA, IE=0 IC=1mA, IB=0 IE=100µA, IC=0 VCB=200V, IE=0 VEB=6V, IC=0 VCE=10V, IC=30mA IC=20mA, IB=2mA IC=20mA, IB=2mA VCE=20V, IC=10mA VCB=20V, IE=0, f=1MHz Min. Typ. Max. 300 300 6 40 50 0.1 0.1 0.5 0.9 3 Unit V V V µA µA V V MHz pF VCE(sat) fT Cob VBE(sat) ...