SBT5401

Semiconductor SBT5401 PNP Silicon Transistor Description General purpose amplifier High voltage application Features high collector breakdown voltage : VCBO = -160V, VCEO = -150V Low collector saturation voltage : VCE(sat)=-0.5V(MAX.) Complementary pair with SBT5551 Ordering Information Type NO. SBT5401 Marking NFN Package Code SOT-23 Outline Dimensions unit : mm 2.4±0.1 1.30±0.1 1 1.90 Typ. 3 2 0.4 Typ. 0.45~0.60 0.2 Min. 2.9±0.1 1.12 Max. 0~0.1 KST-2013-000 0.124 PIN Connections 1. Base 2. Emitter 3. Collector 0.38 -0.03 +0.05 1 SBT5401 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature (Ta=25°C) Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings -160 -150 -5 -600 200 150 -55~150 Unit V V V mA mW °C °C Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Collector-Emitter saturation voltage Collector-Emitter saturation voltage Base-Emitter saturation voltage Base-Emitter saturation voltage Transition frequency Collector output capacitance (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE (1) hFE (2) hFE (3) VCE(sat)(1) VBE(sat)(1) fT Cob * Test Condition IC=-100µA, IE=0 IC=-1mA, IB=0 IE=-10µA, IC=0 VCB=-120V, IE=0 VEB=-3V,...