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SAP15 Dataheets PDF



Part Number SAP15
Manufacturers Sanken electric
Logo Sanken electric
Description Darlington transistors
Datasheet SAP15 DatasheetSAP15 Datasheet (PDF)

Darlington transistors with built-in temperature compensation diodes for audio amplifier applications SAPseries Features qBuilt-in temperature compensation diodes and one emitter resistor qReal time temperature compensation The temperature compensation diodes are mounted on one chip and placed in the center of the chip to detect temperature rises directly. qElimination of the temperature dependency of the idling current The temperature coefficient of the diodes is optimized to have the idling c.

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Darlington transistors with built-in temperature compensation diodes for audio amplifier applications SAPseries Features qBuilt-in temperature compensation diodes and one emitter resistor qReal time temperature compensation The temperature compensation diodes are mounted on one chip and placed in the center of the chip to detect temperature rises directly. qElimination of the temperature dependency of the idling current The temperature coefficient of the diodes is optimized to have the idling current stabilized; thus one of the fatal failure modes in conventional Darlington transistors, Thermal Runaway, is avoidable. qSymmetrical design for the PNP and the NPN pinouts The new design minimizes the length of the pattern layout, and output distortions are controlled. qDarlington transistors, temperature compensation diodes and one emitter resistor are incorporated in one package, so labor for parts insertion as well as the parts count is reduced. Line up Part Number SAP15P/SAP15N SAP10P/SAP10N SAP08P/SAP08N PC (W) 150 100 80 VCEO (V ) 160 150 150 IC (A) 15 12 10 hFE 5000 to 20000 5000 to 20000 5000 to 20000 Emitter resistor (Ω) 0.22 0.22 0.22 sExternal Dimentions (Unit : mm) 15.4±0.3 9.9±0.2 3.2±0.2 5±0.2 4.5±0.2 1.6±0.2 sEquivalent Circuit Diagram NPN C D B R :70Ω Typ. PNP E Emitter resistor RE: 0.22Ω Typ. 3.3±0.2 3.4max a b 2±0.1 (36°) 7±0.2 22±0.3 23±0.3 28±0.3 S S D R: 70Ω Typ. Emitter resistor RE: 0.22Ω Typ. B 1±0.1 (41) (2.5) +0.2 0.65 –0.1 0.8 –0.1 2.54±0.1 3.81±0.1 (7.62) (12.7) 17.8±0.3 4±0.1 +0.2 2.54±0.1 3.81±0.1 (18) 1.35 –0.1 +0.2 E C 0.65 –0.1 +0.2 Weight: approx 8.3g a. Part Number b. Lot Number BD C S E E S C D B ➀➁ ➂ ➃➄ Application Information 1. Recommended Operating Conditions ➀Add a variable resistor (VR) between diode terminals to adjust the idling current. The resistor having 0 to 200Ω is to be used. ➁Adjust the forward current flowing over the diodes at 2.5mA. ➂Adjust the idling current at 40mA with the external variable resistor. Both the temperature coefficients for the transistor and the diodes are matched under the above conditions. Both the PNP and the NPN are Darlington transistors, so the temperature change ratio of the total four VBE of the transistors is subject to the compensation. One PN junction diode in the NPN and five Schottky barrier diodes in the PNP are built-in, and the total six diodes are operating as the temperature compensation. The temperature coefficient of the total diodes (its variable value) becomes smaller with a larger forward current (approximately – 0.2mV/°C to 1mA), and the coefficient of the total transistors (its variable value) also becomes smaller with a larger idling current (approximately – 0.1mV/°C to 10mA), but the both variable values are small. Thus, the distortion of the temperature coefficient caused by the different current is small, so the thermal runaway may not be occurred due to the changes of the recommended ratings; however, the actual operation is to be confirmed by using an experimental equipment or board. +VCC NPN B C S D 2.5mA D E E 40mA External variable resistor (VR) (0 to 200Ω) S B C –VCC PNP 2. External Variable Resistor Total forward voltage (at IF =2.5mA) of the diodes is designed to be equal or less than that of total VBE (at IC = 40mA) of the transistor, thus the idling current is required to be adjusted at 40mA with an additional external variable resistor. The relations are shown as below: Total VF of Diode ∆V=0 to 500mV Total VBE of Transistor + Total VRE of Emitter Resistor The VBE of the transistor is dependent to the hFE, and the VBE is lower with higher hFE and vice versa. The hFE for both the PNP and the NPN varies between 5k and 20k; thus the VBE is the lowest with the combination of maximum hFE (20k) each and it is the highest with the combination of minimum hFE (5k) each. Presuming the voltage difference between the VF of the diodes and the VBE of the transistors (including the total voltage drops of the two emitter resistors) as ∆V. Minimum VBE – Maximum VF variations of the diodes = 0 Maximum VBE – Minimum VF variations of the diodes = 500mV The current flowing over the diodes and the VR is adjusted at 2.5mA; therefore 500mV 2.5mA = 200Ω Consequently, the applicable VR value is to be 0 to 200Ω VBE Min. (P and N: hFE Max.) IC VBE Max. (P and N: hFE Min.) 40mA Di VF Variations VBE TR VBE Variations ∆VF =500mV 3. Characteristics of the temperature compensation diodes The several temperature compensation diodes are connected in series, so the forward voltage is varied with small current fluctuations. Therefore, in case the forward current flowing over the diodes is set at 2.5mA and over, the forward voltage rises, and in the worst combinations, the idling current reaches to 40mA and over with minimum VR of 0Ω. On the contrary, in case the forward current is set at 2.5mA or below, the idling current may not reach to 40mA with maximum VR of 200Ω. 10.0 Ta=25°C PN-Di .


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