SB0015-03A

Ordering number:EN2198A SB0015-03A Schottky Barrier Diode 30V, 15mA Detection Applications Features · Glass sleeve structure. · Detection efficiency : 70%. · Small size (Half the size of the DO-35 heretofore in use) Package Dimensions unit:mm 1153A [SB0015-03A] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Reverse Voltage Average Rectified Current Junction Temperature Storage Temperature Symbol VR IO Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Forward Current Reverse Current Capacitance Detection Efficiency Symbol IF VF=1.0V IR VR=10V C VR=1V, f=1MHz η f=40MHz Conditions Detection Efficiency Circuit C:Cathode A:Anode Ratings 30 15 100 –55 to +100 Unit V mA ˚C ˚C Ratings min typ 3.0 70 max 100 3.0 Unit mA µA pF % Unit (resistance : Ω, capacitance : F) SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 62098HA (KT)/1129TA, TS No.2198-1/3 SB0015-03A No.2198-2/3 SB0015-03A No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTR...