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SB130 Dataheets PDF



Part Number SB130
Manufacturers Diodes Incorporated
Logo Diodes Incorporated
Description 1.0A SCHOTTKY BARRIER RECTIFIER
Datasheet SB130 DatasheetSB130 Datasheet (PDF)

SB120 - SB160 1.0A SCHOTTKY BARRIER RECTIFIER Features · · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 40A Peak For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications Plastic Material - UL Flammability Classification 94V-0 A B A C D DO-41 Plastic Dim Min 25.40 4.06 0.71 2.

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SB120 - SB160 1.0A SCHOTTKY BARRIER RECTIFIER Features · · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 40A Peak For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications Plastic Material - UL Flammability Classification 94V-0 A B A C D DO-41 Plastic Dim Min 25.40 4.06 0.71 2.00 Max ¾ 5.21 0.864 2.72 A B C D Mechanical Data · · · · · · Case: Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Weight: 0.3 grams (approx.) Mounting Position: Any Marking: Type Number All Dimensions in mm Maximum Ratings and Electrical Characteristics Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note 1) (See Figure 1) Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage (Note 2) Peak Reverse Current at Rated DC Blocking Voltage (Note 2) @ IF = 1.0A @ TA = 25°C @ TA = 100°C Symbol VRRM VRWM VR VR(RMS) IO IFSM VFM IRM RqJL RqJA Tj TSTG @ TA = 25°C unless otherwise specified SB120 20 14 SB130 30 21 SB140 40 28 1.0 40 SB150 50 35 SB160 60 42 Unit V V A A 0.50 0.5 10 15 50 -65 to +125 -65 to +150 0.70 5.0 V mA °C/W °C/W Typical Thermal Resistance Junction to Lead (Note 1) Typical Thermal Resistance Junction to Ambient Operating Temperature Range Storage Temperature Range Notes: -65 to +150 °C 1. Measured at ambient temperature at a distance of 9.5mm from the case. 2. Short duration test pulse used to minimize self-heating effect. DS23022 Rev. 4 - 2 1 of 3 www.diodes.com SB120-SB160 10 I(O), AVERAGE FORWARD CURRENT (A) IF, INSTANTANEOUS FWD CURRENT (A) 1.0 Tj = +125° C Tj = +75° C Tj = +25° C 1.0 Tj = -25° C 0.5 Resistive or Inductive Load 0.375” (9.5mm) lead length SB120 - SB140 SB150 & SB160 1% Duty Cycle 0 25 50 75 100 125 150 0.1 0.2 0.4 0.6 0.8 1.0 1.2 TL, LEAD TEMPERATURE (° C) Fig. 1 Forward Current Derating Curve VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics - SB120 thru SB140 IFSM, PEAK FORWARD SURGE CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) 10 40 8.3ms Single Half Sine-Wave (JEDEC Method) Tj = Tj(max) 30 1.0 Tj = +125ºC 20 Tj = +25ºC 0.1 10 1% Duty Cycle 0.01 0 0.2 0.4 0.6 0.8 1.0 0 1 10 100 VF, INSTANTANEOUS FWD VOLTAGE (V) Fig. 3 Typ. Forward Characteristics - SB150 thru SB160 NUMBER OF CYCLES AT 60 Hz Fig. 4 Max Non-Repetitive Peak Fwd Surge Current 10,000 1000 Tj = 25° C f = 1.0MHz Vsig = 50m Vp-p CT, TOTAL CAPACITANCE (pF) 1000 Tj = +125° C 100 SB120 - SB140 Tj = +75° C 100 SB150 - SB160 10 1 Tj = +25° C 0.1 10 0.1 1 .


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