BARRIER RECTIFIER. SB180 Datasheet

SB180 RECTIFIER. Datasheet pdf. Equivalent

Part SB180
Description 1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
Feature SB170 - SB1100 1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features · · · · · · · · Schottky Barrie.
Manufacture Diodes Incorporated
Datasheet
Download SB180 Datasheet

DATA SHEET SB120~SB1100 1 AMPERE SCHOTTKY BARRIER RECTIFIERS SB180 Datasheet
SB170 - SB1100 1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER SB180 Datasheet
SB120 THRU SB1B0 SCHOTTKY BARRIER RECTIFIER Reverse Voltage SB180 Datasheet
SB120-SB1100 SB120 - SB1100 Features • • 1.0 ampere operati SB180 Datasheet
SIYU R Features SB120 ...... SB1100 PLASTIC SCHOTTKY BARR SB180 Datasheet
Continental Device India Limited An ISO/TS 16949, ISO 9001 a SB180 Datasheet
DO-41 0.107 (2.7) 0.080 (2.0) DIA. 1.0 (25.4) MIN. 0.205 ( SB180 Datasheet
Features xxxx Metal-Semiconductor junction with guard ring SB180 Datasheet
SB120 THRU SB1100 SCHOTTKY BARRIER RECTIFIER Reverse Voltage SB180 Datasheet
SB120 thru SB1100 Schottky Barrier Rectifiers Reverse Voltag SB180 Datasheet
Recommendation Recommendation Datasheet SB180 Datasheet




SB180
SB170 - SB1100
1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
Features
· Schottky Barrier Chip
· Guard Ring Die Construction for
Transient Protection
· Ideally Suited for Automatic Assembly
· Low Power Loss, High Efficiency
· Surge Overload Rating to 25A Peak
· For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Application
· High Temperature Soldering:
260°C/10 Second at Terminal
· Plastic Material: UL Flammability
Classification Rating 94V-0
Mechanical Data
· Case: Molded Plastic
· Terminals: Plated Leads -
Solderable per MIL-STD-202, Method 208
· Polarity: Cathode Band
· Weight: 0.3 grams (approx.)
· Mounting Position: Any
· Marking: Type Number
ABA
C
D
DO-41
Dim Min Max
A 25.4 ¾
B 4.1 5.2
C 0.71 0.86
D 2.0 2.7
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@ TT = 85°C
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage @ IF = 1.0A
@ TA = 25°C
Peak Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance (Note 2)
@ TA = 25°C
@ TA = 100°C
Typical Thermal Resistance Junction to Lead
Typical Thermal Resistance Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Symbol
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
VFM
IRM
Cj
RqJL
RqJA
Tj, TSTG
SB170
70
49
SB180
SB190
80 90
56 63
1.0
25
0.80
0.5
10
80
15
50
-65 to +125
SB1100
100
70
Unit
V
V
A
A
V
mA
pF
K/W
K/W
°C
Notes: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
DS30116 Rev. B-1
1 of 2
SB170 - SB1100



SB180
20
10
1.0
0.5 1.0
0
25 50 75 100 125 150
TL, LEAD TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
40
Single Half Sine-Wave
(JEDEC Method)
Tj = 150°C
30
0.1
0.1
0.5 0.9
Tj = 25°C
IF Pulse Width = 300µs
1.3 1.7 2.1
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
1000
Tj = 25°C
f = 1.0MHz
20 100
10
0
1
10 100
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current
10
0.1
1 10
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
100
DS30116 Rev. B-1
2 of 2
SB170 - SB1100





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