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SB200-09

Sanyo Semicon Device

90V/ 20A Rectifier

Ordering number :EN2689 SB200-09 Schottky Barrier Diode (Twin Type · Cathode Common) 90V, 20A Rectifier Applications ·...


Sanyo Semicon Device

SB200-09

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Description
Ordering number :EN2689 SB200-09 Schottky Barrier Diode (Twin Type · Cathode Common) 90V, 20A Rectifier Applications · High frequency rectification (switching regulators, converters, choppers). Package Dimensions unit:mm 1160 [SB200-09] Features · Low forward voltage (VF max=0.85V). · Fast reverse recovery time (trr max=55ns). · Low switching noise. · Low leakage current and high reliability due to highly reliable planar structure. C:Cathode A:Anode SANYO:TO-3PB Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IO IFSM Tj Tstg Conditions Ratings –90 –95 Unit V V A A 50Hz, resistive load, Tc=91˚C 50Hz sine wave, 1 cycle 20 120 –55 to +125 –55 to +125 ˚C ˚C Electrical Characteristics Parameter Reverse Voltage Forward Voltage Reverse Current Reverse Recovery Time Thermal Resistance Symbol VR VF IR trr Rthj-c Conditions Ratings min –90 0.85 –0.8 55 1.3 typ max Unit V V mA ns IR=–4mA, Tj=25˚C* IF=8A, Tj=25˚C* VR=–45V, Tj=25˚C* IF=2A, Tj=25˚C*, –dIF/dt=10A/µs Junction-Case:Smoothed DC ˚C/W Note)*:Value per element Electrical Connection A:Anode C:Cathode SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 33098HA (KT)/2088TA, TS No.2689-1/3 SB200-09 No.2689-2/3 SB200-09 No products described ...




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