NCR169D Advance Information General Purpose Sensitive Gate Silicon Controlled Rectifier
Reverse Blocking Thyristor
PNPN ...
NCR169D Advance Information General Purpose Sensitive Gate Silicon Controlled Rectifier
Reverse Blocking Thyristor
P
NPN device designed for line-powered general purpose applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in a cost effective plastic TO-226AA package. Sensitive Gate Allows Direct Triggering by Microcontrollers and Other Logic Circuits On–State Current Rating of 0.8 Amperes RMS at 80°C Surge Current Capability – 10 Amperes Immunity to dV/dt – 20 V/µsec Minimum at 110°C Glass-Passivated Surface for Reliability and Uniformity Device Marking: NCR169D, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Peak Repetitive Off–State Voltage (Note 1.) (TJ = *40 to 110°C, Sine Wave, 50 to 60 Hz; Gate Open) On-State RMS Current (TC = 80°C) 180° Conduction Angles Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TJ = 25°C) Circuit Fusing Consideration (t = 10 ms) Forward Peak Gate Power (TA = 25°C, Pulse Width v 1.0 µs) Forward Average Gate Power (TA = 25°C, t = 20 ms) Forward Peak Gate Current (TA = 25°C, Pulse Width v 1.0 µs) Reverse Peak Gate Voltage (TA = 25°C, Pulse Width v 1.0 µs) Operating Junction Temperature Range @ Rate VRRM and VDRM Storage Temperature Range Symbol VDRM, VRRM IT(RMS) ITSM Value 400 Unit Volts TO–92 (TO–226AA) CASE 029 STYLE 10 K G
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SCR 0.8 AMPERES RMS 400 VOLTS
G A K
MARKING DIAGRAM
NCR 169D...