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SDT452AP Dataheets PDF



Part Number SDT452AP
Manufacturers SamHop Microelectronics
Logo SamHop Microelectronics
Description P-Channel Enhancement Mode Field Effect Transistor
Datasheet SDT452AP DatasheetSDT452AP Datasheet (PDF)

S DT 452AP S amHop Microelectronics C orp. Augus t , 2002 P -C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S -30V F E AT UR E S ( m W ) TYP ID -5.3A R DS (ON) S uper high dense cell design for low R DS (ON ). 52 @ V G S = -10V 85 @ V G S = -4.5V R ugged and reliable. S OT-223 P ackage. D D D G S OT-223 S D G S OT-223 (J 23Z) S G S ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain .

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S DT 452AP S amHop Microelectronics C orp. Augus t , 2002 P -C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S -30V F E AT UR E S ( m W ) TYP ID -5.3A R DS (ON) S uper high dense cell design for low R DS (ON ). 52 @ V G S = -10V 85 @ V G S = -4.5V R ugged and reliable. S OT-223 P ackage. D D D G S OT-223 S D G S OT-223 (J 23Z) S G S ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous -P ulsed a S ymbol V DS V GS @ TJ=125 C ID IDM IS PD T J , T S TG Limit -30 20 -5.3 -16 5.3 3 0.08 -65 to 150 Unit V V A A A W W/ C C Drain-S ource Diode Forward C urrent Maximum P ower Dissipation @ Tc=25 C Derate above 25 C Operating and S torage Temperature R ange THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient 1 R JC R JA 12 42 C /W C /W S DT 452AP E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS c Condition V GS = 0V, ID = -250uA V DS = -24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = -250uA V GS = -10V, ID =-5.3A V GS = -4.5V, ID = -4.2A V DS = -5V, V GS = -10V V DS = -10V, ID = - 5.3A Min Typ C Max Unit -30 -1 100 OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage V uA nA V ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance -1 -1.5 52 85 -16 -7 860 470 180 V D = -15V, ID = -1A, V GE N = - 10V, R GE N = 6 ohm V DS =-15V,ID = -5.3A,V GS =-10V V DS =-15V,ID = -5.3A,V GS =-4.5V V DS =-15V, ID = -5.3A, V GS =-10V 2 -3 65 m ohm 100 m ohm A S PF PF PF DYNAMIC CHAR ACTE R IS TICS Input Capacitance Output Capacitance R everse Transfer Capacitance C IS S C OS S CRSS c V DS =-15V, V GS = 0V f =1.0MH Z S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Q gs Q gd 9 10 37 23 15 8.8 3 4 20 40 90 110 20 10.6 ns ns ns ns nC nC nC nC S DT 452AP E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted) Parameter Diode Forward Voltage S ymbol VSD Condition V GS = 0V, Is =-5.3A Min Typ C Max Unit 5 -0.84 -1.3 V DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 10 -V G S =10,9,8,7,6V 8 16 -V G S =5V 6 4 2 20 -55 C 25 C T j=125 C -I D , Drain C urrent (A) -I D , Drain C urrent (A) 12 8 4 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.5 1 1.5 2 2.5 3 -V DS , Drain-to-S ource Voltage (V ) -V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics R DS (ON) , On-R es is tance(Ohms ) (Normalized) 3000 2500 1.8 1.6 1.4 1.2 1.0 0.8 F.


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