Document
S DT 452AP
S amHop Microelectronics C orp. Augus t , 2002
P -C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
-30V
F E AT UR E S
( m W ) TYP
ID
-5.3A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
52 @ V G S = -10V 85 @ V G S = -4.5V
R ugged and reliable. S OT-223 P ackage.
D
D D G S OT-223
S
D G S OT-223 (J 23Z)
S
G
S
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous -P ulsed
a
S ymbol V DS V GS @ TJ=125 C ID IDM IS PD T J , T S TG
Limit -30 20 -5.3 -16 5.3 3 0.08 -65 to 150
Unit V V A A A W W/ C C
Drain-S ource Diode Forward C urrent Maximum P ower Dissipation @ Tc=25 C Derate above 25 C Operating and S torage Temperature R ange
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient
1
R JC R JA
12 42
C /W C /W
S DT 452AP
E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted)
Parameter
5
S ymbol
BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS
c
Condition
V GS = 0V, ID = -250uA V DS = -24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = -250uA V GS = -10V, ID =-5.3A V GS = -4.5V, ID = -4.2A V DS = -5V, V GS = -10V V DS = -10V, ID = - 5.3A
Min Typ C Max Unit
-30 -1
100
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage V uA nA V
ON CHAR ACTE R IS TICS b
Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance -1 -1.5 52 85 -16 -7 860 470 180 V D = -15V, ID = -1A, V GE N = - 10V, R GE N = 6 ohm V DS =-15V,ID = -5.3A,V GS =-10V V DS =-15V,ID = -5.3A,V GS =-4.5V V DS =-15V, ID = -5.3A, V GS =-10V
2
-3
65 m ohm 100 m ohm A S
PF PF PF
DYNAMIC CHAR ACTE R IS TICS
Input Capacitance Output Capacitance R everse Transfer Capacitance
C IS S C OS S CRSS
c
V DS =-15V, V GS = 0V f =1.0MH Z
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge
tD(ON) tr tD(OFF) tf Qg Q gs Q gd
9 10 37 23 15 8.8 3 4
20 40 90 110 20 10.6
ns ns ns ns nC nC nC nC
S DT 452AP
E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted)
Parameter
Diode Forward Voltage
S ymbol
VSD
Condition
V GS = 0V, Is =-5.3A
Min Typ C Max Unit
5
-0.84 -1.3 V
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b
Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing.
10 -V G S =10,9,8,7,6V 8 16 -V G S =5V 6 4 2 20 -55 C 25 C T j=125 C
-I D , Drain C urrent (A)
-I D , Drain C urrent (A)
12
8
4 0
0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.5
1
1.5
2
2.5
3
-V DS , Drain-to-S ource Voltage (V )
-V G S , G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
R DS (ON) , On-R es is tance(Ohms ) (Normalized)
3000 2500 1.8 1.6 1.4 1.2 1.0 0.8
F.