MRW3005

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRW3001/D Microwave Power Transistors . . . designed primarily for large–signal output and driver amplifier stages in the 1.5 to 3.0 GHz frequency range. Designed for Class B or C, Common Base Linear Power Amplifiers Specified 28 Volt, 3.0 GHz Characteristics: Output Power — 1.0 to 5.0 Watts Power Gain — 5.0 to 7.0 dB Min Collector Efficiency — 30% Min Gold Metallization for Improved Reliability Diffused Ballast Resistors Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. MRW3001 MRW3003 MRW3005 5.0 – 7.0 dB 1.5 – 3.0 GHz 1.0 – 5.0 WATTS MICROWAVE POWER TRANSISTORS MAXIMUM RATINGS Rating Collector–Base Voltage Emitter–Base Voltage Operating Junction Temperature Storage Temperature Range Symbol VCBO VEBO TJ Tstg 3001 3003 45 3.5 200 – 65 to + 200 3005 Unit Vdc Vdc °C °C CASE 328A–03, STYLE 1 (GP–13) MRW3001, 3003, 3005 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, RF, Junction to Case Symbol RθJC 35 Max 17 8.5 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 10 mA, VBE = 0) (IC = 30 mA, VBE = 0) (IC = 50 mA, VBE = 0) Collector–Base Breakdown Voltage (IC = 1.0 mA, IE = 0) (IC = 3.0 mA, IE = 0) (IC = 5.0 mA, IE = 0) Emitter–Base Breakdown Voltage (IE = 1.0 mA, IC = 0) Collector Cutoff Current (VCB = 28 V,...