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MMSD914T1

ON Semiconductor

Switching Diode

MMSD914T1 Switching Diode • SOD–123 Surface Mount Package • High Breakdown Voltage • Fast Speed Switching Time Preferred...


ON Semiconductor

MMSD914T1

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Description
MMSD914T1 Switching Diode SOD–123 Surface Mount Package High Breakdown Voltage Fast Speed Switching Time Preferred Device The switching diode has the following features: http://onsemi.com 1 CATHODE 2 ANODE MAXIMUM RATINGS Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 100 200 500 Unit Vdc mAdc mAdc 1 2 PLASTIC SOD–123 CASE 425 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR–5 Board TA = 25°C Derate above 25°C (1) Symbol PD Max 225 1.8 Unit mW mW/°C °C/W mW mW/°C °C/W °C DEVICE MARKING 5D Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate (2) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Range RqJA PD 556 300 2.4 ORDERING INFORMATION Device MMSD914T1 Package SOD–123 Shipping 3000 / Tape & Reel RqJA TJ, Tstg 417 –55 to +150 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage (IBR = 100 µAdc) Reverse Voltage Leakage Current (VR = 20 Vdc) (VR = 75 Vdc) Forward Voltage (IF = 10 mAdc) Diode Capacitance (VR = 0 Vdc, f = 1.0 MHz) Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina V(BR) IR VF CD trr 100 — — — — — — 25 5.0 1000 4.0 4.0 Vdc nAdc mAdc mVdc pF ns Preferred devices are recommended choices for future use and be...




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