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FQPF90N10V2 Dataheets PDF



Part Number FQPF90N10V2
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 100V N-Channel MOSFET
Datasheet FQPF90N10V2 DatasheetFQPF90N10V2 Datasheet (PDF)

FQP90N10V2/FQPF90N10V2 QFET FQP90N10V2/FQPF90N10V2 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for DC to DC converters, sychronous re.

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FQP90N10V2/FQPF90N10V2 QFET FQP90N10V2/FQPF90N10V2 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for DC to DC converters, sychronous rectification, and other applications lowest Rds(on) is required. ® Features • • • • • • 90 A, 100V, RDS(on) = 0.01Ω @VGS = 10 V Low gate charge ( typical 147 nC) Low Crss ( typical 300 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! ● ◀ ▲ ● ● G! G DS TO-220 FQP Series GD S TO-220F FQPF Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQP90N10V2 100 90 68 360 FQPF90N10V2 90 * 68 * 360 * ± 30 2430 90 25 4.5 Units V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) (Note 2) (Note 1) (Note 1) (Note 3) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 250 1.67 -55 to +175 300 83 0.55 * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol RθJC RθJS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient FQP90N10V2 0.6 0.5 62.5 FQPF90N10V2 1.8 -62.5 Units °C/W °C/W °C/W ©2004 Fairchild Semiconductor Corporation Rev. A1, April 2004 FQP90N10V2/FQPF90N10V2 Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS / ∆TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 100 V, VGS = 0 V VDS = 80 V, TC = 150°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 100 ------0.1 ------1 10 100 -100 V V/°C µA µA nA nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 µA VGS = 10 V, ID = 45 A VDS = 40 V, ID = 45 A (Note 4) 2.0 --- -8.5 72 4.0 10 -- V mΩ S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---4730 1180 300 6150 1530 390 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 80 V, ID = 90 A, VGS = 10 V (Note 4, 5) VDD = 50 V, ID = 90 A, RG = 25 Ω (Note 4, 5) -------- 52 492 304 355 147 28 60 114 994 618 720 191 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 90 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 90 A, dIF / dt = 100 A/µs (Note 4) ------ ---114 0.54 90 360 1.4 --- A A V ns µC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 0.3mH, IAS = 90A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 90A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature ©2004 Fairchild Semiconductor Corporation Rev. A1, April 2004 FQP90N10V2/FQPF90N10V2 Typical Characteristics VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V 10 2 175°C 25°C ID, Drain Current [A] 10 2 ID, Drain Current [A] 10 1 -55°C 10 0 10 1 Notes : 1. 250µs Pulse Test 2. TC = 25° -1 Notes : 1. VDS = 40V 2. 250µs Pulse Test -1 10 10 0 10 1 10 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 30 RDS(ON) [mΩ], Drain-Source On-Resistance VGS = 10V 20 IDR, Reverse Drain Current [A] 25 10 2 10 1 15 10 VGS = 20V 175°C 10 0 25°C Notes : 1. VGS = 0V 2. 250µs Pulse Test 5 Note : TJ = 25° 0 0 100 200 300 400 500 600 10 -1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperat.


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