Document
FQP90N10V2/FQPF90N10V2
QFET
FQP90N10V2/FQPF90N10V2
100V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for DC to DC converters, sychronous rectification, and other applications lowest Rds(on) is required.
®
Features
• • • • • • 90 A, 100V, RDS(on) = 0.01Ω @VGS = 10 V Low gate charge ( typical 147 nC) Low Crss ( typical 300 pF) Fast switching 100% avalanche tested Improved dv/dt capability
D
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●
◀
▲
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G! G DS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
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S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQP90N10V2 100 90 68 360
FQPF90N10V2 90 * 68 * 360 * ± 30 2430 90 25 4.5
Units V A A A V mJ A mJ V/ns W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C)
(Note 2) (Note 1) (Note 1) (Note 3)
- Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
250 1.67 -55 to +175 300
83 0.55
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol RθJC RθJS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient FQP90N10V2 0.6 0.5 62.5 FQPF90N10V2 1.8 -62.5 Units °C/W °C/W °C/W
©2004 Fairchild Semiconductor Corporation
Rev. A1, April 2004
FQP90N10V2/FQPF90N10V2
Electrical Characteristics
Symbol Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS ∆BVDSS / ∆TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 100 V, VGS = 0 V VDS = 80 V, TC = 150°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 100 ------0.1 ------1 10 100 -100 V V/°C µA µA nA nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 µA VGS = 10 V, ID = 45 A VDS = 40 V, ID = 45 A
(Note 4)
2.0 ---
-8.5 72
4.0 10 --
V mΩ S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---4730 1180 300 6150 1530 390 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 80 V, ID = 90 A, VGS = 10 V
(Note 4, 5)
VDD = 50 V, ID = 90 A, RG = 25 Ω
(Note 4, 5)
--------
52 492 304 355 147 28 60
114 994 618 720 191 ---
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings
IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 90 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 90 A, dIF / dt = 100 A/µs
(Note 4)
------
---114 0.54
90 360 1.4 ---
A A V ns µC
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 0.3mH, IAS = 90A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 90A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature
©2004 Fairchild Semiconductor Corporation
Rev. A1, April 2004
FQP90N10V2/FQPF90N10V2
Typical Characteristics
VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V
10
2
175°C 25°C
ID, Drain Current [A]
10
2
ID, Drain Current [A]
10
1
-55°C
10
0
10
1
Notes : 1. 250µs Pulse Test 2. TC = 25°
-1
Notes : 1. VDS = 40V 2. 250µs Pulse Test
-1
10
10
0
10
1
10
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
30
RDS(ON) [mΩ], Drain-Source On-Resistance
VGS = 10V
20
IDR, Reverse Drain Current [A]
25
10
2
10
1
15
10
VGS = 20V
175°C
10
0
25°C
Notes : 1. VGS = 0V 2. 250µs Pulse Test
5
Note : TJ = 25°
0 0 100 200 300 400 500 600
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperat.