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K9K1208U0A-YIB0 Dataheets PDF



Part Number K9K1208U0A-YIB0
Manufacturers Samsung semiconductor
Logo Samsung semiconductor
Description 64M x 8 Bit NAND Flash Memory
Datasheet K9K1208U0A-YIB0 DatasheetK9K1208U0A-YIB0 Datasheet (PDF)

K9K1208U0A-YCB0, K9K1208U0A-YIB0 Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 FLASH MEMORY History 1. Initial issue - Changed /SE(pin # 6, Spare Area Enable) pin to N.C ( No Connection). So, /SE pin is don’ t-cared regardless of external logic input level and is fixed as low internally. Draft Date Dec. 6th 2000 Remark Preliminary 0.1 1. Changed plane address in Copy-Back Program Dec. 28th 2000 - A14, the plane address, of source and destination page address.

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Document
K9K1208U0A-YCB0, K9K1208U0A-YIB0 Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 FLASH MEMORY History 1. Initial issue - Changed /SE(pin # 6, Spare Area Enable) pin to N.C ( No Connection). So, /SE pin is don’ t-cared regardless of external logic input level and is fixed as low internally. Draft Date Dec. 6th 2000 Remark Preliminary 0.1 1. Changed plane address in Copy-Back Program Dec. 28th 2000 - A14, the plane address, of source and destination page address must be the same. => A14 and A25, the plane address, of source and destination page address must be the same. 1. In addition, explain WE function in pin description - The WE must be held high when outputs are activated. Jan. 17th 2001 Final 0.2 Note : For more detailed features and specifications including FAQ, please refer to Samsung’ s Flash web site. http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near your office. 1 K9K1208U0A-YCB0, K9K1208U0A-YIB0 FLASH MEMORY 64M x 8 Bit NAND Flash Memory FEATURES • Voltage Supply : 2.7V~3.6V • Organization - Memory Cell Array : (64M + 2,048K)bit x 8bit - Data Register : (512 + 16)bit x8bit • Automatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (16K + 512)Byte • 528-Byte Page Read Operation - Random Access : 10µs(Max.) - Serial Page Access : 60ns(Min.) • Fast Write Cycle Time - Program time : 200µ s(Typ.) - Block Erase Time : 2ms(Typ.) • Command/Address/Data Multiplexed I/O Port • Hardware Data Protection - Program/Erase Lockout During Power Transitions • Reliable CMOS Floating-Gate Technology - Endurance : 100K Program/Erase Cycles - Data Retention : 10 Years • Command Register Operation • Package : - K9K1208U0A-YCB0/YIB0 : 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) GENERAL DESCRIPTION The K9K1208U0A are a 64M(67,108,864)x8bit NAND Flash Memory with a spare 2,048K(2,097,152)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 528byte page in typically 200µs and an erase operation can be performed in typically 2ms on a 16K-byte block. Data in the page can be read out at 60ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command inputs. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verify and margining of data. Even the write-intensive systems can take advantage of the K9K1208U0A′s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9K1208U0A-YCB0/YIB0 is an optimum solution for .


K9K1208U0A-YCB0 K9K1208U0A-YIB0 KS0105


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