MRF374A

MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Order this document by MRF374A/D The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large–signal, common source amplifier applications in 28/32 volt transmitter equipment. Typical Two–Tone Performance @ 860 MHz, 32 Volts, Narrowband Fixture Output Power — 130 Watts PEP Power Gain — 17.3 dB Efficiency — 41% IMD — –32.5 dBc 100% Tested for Load Mismatch Stress at All Phase Angles with 10:1 VSWR @ 32 Vdc, 860 MHz, 130 Watts, f1 = 857 MHz, f2 = 863 MHz Integrated ESD Protection Excellent Thermal Stability Characterized with Differential Large–Signal Impedance Parameters MRF374A 470 – 860 MHz, 130 W, 32 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Freescale Semiconductor, Inc... CASE 375F–04, STYLE 1 NI–650 MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 70 – 0.5, +15 302 1.72 – 65 to +150 200 Unit Vdc Vdc Watts W/°C °C °C ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Class 1 (Minimum) M2 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0....