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2SK3279 Dataheets PDF



Part Number 2SK3279
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description N-Channel Silicon MOSFET
Datasheet 2SK3279 Datasheet2SK3279 Datasheet (PDF)

Ordering number : ENN6600 Preliminary Features • Low ON resistance. • 4V-drive. • Ultrahigh-spped switching. 2SK3279 N-Channel Silicon MOSFET 2SK3279 DC/DC Converter Applications Package Dimensions unit : mm 2083B [2SK3279] 6.5 5.0 4 2.3 0.5 5.5 1.5 7.0 0.85 0.7 0.6 12 3 2.3 2.3 0.8 1.6 7.5 1.2 0.5 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP unit : mm 2092B 6.5 5.0 4 [2SK3279] 2.3 0.5 0.8 5.5 1.5 2.5 7.0 1.2 0.85 1 0.6 2 3 2.3 2.3 0.5 1.2 0 to 0.2 1 : Gate 2 : Drain 3 : .

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Ordering number : ENN6600 Preliminary Features • Low ON resistance. • 4V-drive. • Ultrahigh-spped switching. 2SK3279 N-Channel Silicon MOSFET 2SK3279 DC/DC Converter Applications Package Dimensions unit : mm 2083B [2SK3279] 6.5 5.0 4 2.3 0.5 5.5 1.5 7.0 0.85 0.7 0.6 12 3 2.3 2.3 0.8 1.6 7.5 1.2 0.5 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP unit : mm 2092B 6.5 5.0 4 [2SK3279] 2.3 0.5 0.8 5.5 1.5 2.5 7.0 1.2 0.85 1 0.6 2 3 2.3 2.3 0.5 1.2 0 to 0.2 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN HD 010705-1/3 2SK3279 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10µs, duty cycle≤1% Tc=25°C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance IGSS VGS(off) |yfs| Static Drain-to-Source On-State Resistance RDS(on)1 Input Capacitance RDS(on)2 Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) Rise Time Turn-OFF Delay Time tr td(off) Fall Time Total Gate Charge tf Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller”Charge Qgd Diode Forward Voltage VSD Marking : K3283 ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=10A ID=10A, VGS=10V ID=4A, VGS=4.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=10V, VGS=10V, ID=15A VDS=10V, VGS=10V, ID=15A VDS=10V, VGS=10V, ID=15A IS=15A, VGS=0 Switching Time Test Circuit VIN 10V 0V VIN PW=1µs D.C.≤0.5% VDD=15V ID=10A RL=1.5Ω D VOUT G 2SK3279 P.G 50Ω S Ratings 30 ±20 15 45 1 20 150 --55 to +150 Unit V V A A W W °C °C min 30 Ratings typ 1.0 9 14 22 30 750 300 120 10 220 48 61 14 2.5 1.3 0.93 max 1 ±10 2.4 29 42 1.2 Unit V µA µA V S mΩ mΩ pF pF pF ns ns ns ns nC nC nC V HD 010705-2/3 2SK3279 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology.


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