Ultrahigh-Speed Switching Applications
Ordering number : ENN6637
5HN01C
N-Channel Silicon MOSFET
5HN01C
Ultrahigh-Speed Switching Applications
Features
• • •...
Description
Ordering number : ENN6637
5HN01C
N-Channel Silicon MOSFET
5HN01C
Ultrahigh-Speed Switching Applications
Features
Package Dimensions
unit : mm 2091A
[5HN01C]
0.5
0.4 0.16 0 to 0.1
Low ON-resistance. Ultrahigh-speed switching. 4V drive.
3
1 0.95 0.95 2 1.9 2.9
0.5
1.5 2.5
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions Ratings
1 : Gate 2 : Source 3 : Drain SANYO : CP
Unit 50 ± 20 0.1 0.4 0.25 150 --55 to +150 V V A A W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Sourse Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=1mA, VGS=0 VDS=50V, VGS=0 VGS=± 16V, VDS=0 VDS=10V, ID=100µA VDS=10V, ID=50mA ID=50mA, VGS=10V ID=30mA, VGS=4V Ratings min 50 10 ± 10 1 85 120 5.8 7.5 7.5 10.5 2.4 typ max Unit V µA µA V mS Ω Ω
0.8 1.1
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected...
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