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CM150DY-12NF

Mitsubishi Electric Semiconductor

IGBT MODULES

MITSUBISHI IGBT MODULES CM150DY-12NF HIGH POWER SWITCHING USE CM150DY-12NF ¡IC .........................................



CM150DY-12NF

Mitsubishi Electric Semiconductor


Octopart Stock #: O-282644

Findchips Stock #: 282644-F

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Description
MITSUBISHI IGBT MODULES CM150DY-12NF HIGH POWER SWITCHING USE CM150DY-12NF ¡IC ................................................................... 150A ¡VCES ............................................................ 600V ¡Insulated Type ¡2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm Tc measured point (Base plate) 94 17 23 23 17 C2E1 E2 C1 E2 G2 4 G1 E1 12 2-φ6.5 MOUNTING HOLES 12 80±0.25 12 4 3-M5 NUTS 20 (14) 48 13 18 4 TAB #110. t=0.5 16 7 16 7 16 7.5 E2 G2 C2E1 E2 C1 G1 E1 29 +0.1 –0.5 LABEL 21.2 CIRCUIT DIAGRAM Mar.2003 MITSUBISHI IGBT MODULES CM150DY-12NF HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25°C) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — — Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short DC, TC’ =97°C*3 Pulse Pulse TC = 25°C Conditions Ratings 600 ±20 150 300 150 300 590 –40 ~ +150 –40 ~ +125 2500 2.5 ~ 3.5 3.5 ~ 4.5 310 Unit V V A A A A W °C °C V Nm Nm g (Note 2) (Note 2) Main Terminal to base plate, AC 1 min. Main Terminal M5 Mounting holes M6 Typical value ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rt...




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