D2017UK

TetraFET D2017UK METAL GATE RF SILICON FET MECHANICAL DATA C A ! B GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz SINGLE ENDED FEATURES D ( 2 p ls ) E SIMPLIFIED AMPLIFIER DESIGN SUITABLE FOR BROAD BAND  APPLICATIONS F G H LOW Crss SIMPLE BIAS CIRCUITS DRAIN DP PIN 1 PIN 3 SOURCE GATE PIN 2 LOW NOISE HIGH GAIN – 13 dB MINIMUM mm 16.51 6.35 45° 1.52 6.35 0.13 3.56 0.64 Tol. 0.25 0.13 5° 0.13 0.13 0.03 0.51 0.13 Inches 0.650 0.250 45° 0.060 0.250 0.005 0.140 0.024 Tol. 0.010 0.005 5° 0.005 0.005 0.001 0.020 0.005 DIM A B C D E F G H APPLICATIONS VHF/UHF COMMUNICATIONS from DC to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 29W 65V ±20V 2A –65 to 150°C 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 3040 Issue 1 D2017UK...