DTC643TU

DTC643TU / DTC643TK Transistors Digital transistors (built-in resistor) DTC643TU / DTC643TK !Features In addition to the features of regular digital transistors. 1) Low saturation voltage, typically VCE (sat) =40mV at IC / IB=50mA / 2.5mA, makes these transistors ideal for muting circuits. 2) These transistors can be used at high current levels, IC=600mA. !External dimensions (Unit : mm) UMT3 (1) 2.0±0.2 1.3±0.1 0.9±0.1 0.2 0.7±0.1 0.65 0.65 (2) 1.25±0.1 2.1±0.1 0−0.1 (3) 0.1 0.3 + −0 0.15±0.05 !Structure NPN digital transistor (Built-in resistor type) (1) Emitter (2) Base (3) Collector Each lead has same dimensions Abbreviated symbol : R03 SMT3 2.9±0.2 1.9±0.2 0.95 0.95 0.2 1.1 + −0.1 0.8±0.1 !Equivalent circuit (1) (2) (3) 0.2 1.6 + −0.1 2.8±0.2 C B R R=4.7kΩ E (1) Emitter (2) Base (3) Collector 0.1 0.4 + −0.05 0.1 0.15 + −0.06 Each lead has same dimensions Abbreviated symbol : R03 B : Base C : Collector E : Emitter !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 20 20 12 600 200 150 −55 to +150 Unit V V V mA mW °C °C 0.3Min. 0.1Min. 1/2 DTC643TU / DTC643TK Transistors !Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions BVCBO Collector-base breakdown voltage 20 − − V IC=50µA Collector-emitter breakd...