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EC3H07B Dataheets PDF



Part Number EC3H07B
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description UHF to S Band Low-Noise Amplifier and OSC Applications
Datasheet EC3H07B DatasheetEC3H07B Datasheet (PDF)

Ordering number : ENN6578 EC3H07B NPN Epitaxial Planar Silicon Transistor EC3H07B UHF to S Band Low-Noise Amplifier and OSC Applications Features • • Package Dimensions • • • 0.65 0.05 Low noise : NF=1.5dB typ (f=2GHz). unit : mm High cut-off frequency : fT=10GHz typ (VCE=1V). 2183 : fT=12.5GHz typ (VCE=3V). Low operating voltage. 0.15 High gain : S21e2=9.5dB typ (f=2GHz). 0.05 Ultraminiature (1006 size) and thin (0.5mm) leadless 1 package. 0.25 0.4 0.35 0.2 0.15 [EC3H07B] 2 1.0 3 0.

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Ordering number : ENN6578 EC3H07B NPN Epitaxial Planar Silicon Transistor EC3H07B UHF to S Band Low-Noise Amplifier and OSC Applications Features • • Package Dimensions • • • 0.65 0.05 Low noise : NF=1.5dB typ (f=2GHz). unit : mm High cut-off frequency : fT=10GHz typ (VCE=1V). 2183 : fT=12.5GHz typ (VCE=3V). Low operating voltage. 0.15 High gain : S21e2=9.5dB typ (f=2GHz). 0.05 Ultraminiature (1006 size) and thin (0.5mm) leadless 1 package. 0.25 0.4 0.35 0.2 0.15 [EC3H07B] 2 1.0 3 0.5 0.25 0.05 0.05 (Bottom View) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to- Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions 1 : Base 2 : Emitter 3 : Collector SANYO : E-CSP1006-3 Ratings 9 4 2 30 100 150 --55 to +150 Unit V V V mA mW °C °C 0.6 Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Forward Transfer Gain Noise Figure Symbol ICBO IEBO hFE fT1 fT2 Cob Cre S21e21 S21e22 NF VCB=5V, IE=0 VEB=1V, IC=0 VCE=1V, IC=5mA VCE=1V, IC=5mA VCE=3V, I C=15mA VCB=1V, f=1MHz VCB=1V, f=1MHz VCE=1V, IC=5mA, f=2GHz VCE=3V, IC=15mA, f=2GHz VCE=1V, IC=3mA, f=2GHz 8 100 8 10 12.5 0.55 0.4 9.5 10.5 1.5 2.3 0.7 Conditions Ratings min typ max 1.0 10 160 GHz GHz pF pF dB dB dB Unit µA µA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 72100 TS IM TA-2555 No.6578-1/6 0.5 EC3H07B Type No. Indication (Top view) Electrical Connection (Top view) Polarity mark (Top) G This product adopts a high-frequency process. Please be careful when handling it beause it is susceptible to static electricity. Base Collector Emitter *Electrodes : on the bottom Polarity mark (Top) Collector Base Emitter 10 IC -- VCE 0.05mA 30 IC -- VBE Collector Current, IC -- mA Collector Current, IC -- mA 8 0.04mA 0.03mA VCE=3V 0.2 0.4 0.6 0.8 20 6 4 0.02mA 10 2 0.01mA 0 0 IB=0 1 2 3 4 5 IT02240 0 0 1.0 1.2 IT02241 Collector-to-Emitter Voltage, VCE -- V 1000 7 5 hFE -- IC Base-to-Emitter Voltage, VBE -- V 100 7 f T -- IC Gain-Bandwidth Product, f T -- GHz 5 3 2 DC Current Gain, hFE 3 2 VCE=3V 1V VCE=3V 10 7 5 3 2 100 7 5 3 2 1V 10 3 5 7 1.0 2 3 5 7 10 2 3 5 Collector Current, IC -- mA 1.0 7 100 IT02242 1.0 1.0 1V 3 5 7 100 IT02243 2 3 5 7 10 2 Cob -- VCB Reverse Transfer Capacitance, Cre -- pF f=1MHz Collector Current, IC -- mA 1.0 Cre -- VCB f=1MHz 7 Output Capacitance, Cob -- pF 7 5 5 3 3 2 2 0.1 0.1 2 3 5 7 1.0 2 3 5 Collector-to-Base Voltage, VCB -- V 10 IT02244 7 0.1 0.1 2 3 5 7 1.0 2 3 5 Collector-to-Base Voltage, VCB -- V 7 10 IT02245 No.6578-2/6 EC3H07B 18 2 Forward Transfer Gain, S21e -- dB S21e -- IC 2 2 Forward Transfer Gain, S21e -- dB 18 S21e -- IC 2 16 14 12 10 8 6 4 2 0 1.0 =3V VCE 1V f=1GHz 16 14 12 10 8 6 4 2 0 1.0 f=2GHz VCE=3V 1V 2 3 5 7 10 2 3 5 Collector Current, IC -- mA 5.0 4.5 100 IT02246 7 2 3 5 7 10 2 3 5 NF -- IC Collector Current, IC -- mA 120 7 100 IT02247 PC -- Ta f=2GHz Collector Dissipation, PC -- mW 5 2 3 5 4.0 100 Noise Figure, NF -- dB 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 1.0 80 60 VC E =3V 1V 40 20 0 2 3 7 10 Collector Current, IC -- mA 100 IT02248 7 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT02249 S Parameters (Common emitter) VCE=1V, IC=1mA, ZO=50Ω Freq(MHz) S11 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 0.970 0.939 0.892 0.839 0.791 0.739 0.686 0.649 0.623 0.595 0.568 0.542 0.523 0.505 0.489 ∠S11 --13.4 --26.1 --38.6 --50.0 --59.7 --69.5 --77.7 --85.1 --91.6 --97.8 -104.1 -109.7 -114.6 -119.6 -124.1 S21 3.174 3.115 2.986 2.803 2.596 2.426 2.210 2.077 1.987 1.871 1.768 1.682 1.593 1.541 1.468 ∠S21 166.3 153.6 141.5 130.5 121.8 112.0 104.5 97.8 90.9 84.8 78.9 73.4 68.4 64.1 60.2 S12 0.046 0.087 0.122 0.149 0.171 0.185 0.195 0.204 0.210 0.212 0.213 0.217 0.212 0.209 0.216 ∠S12 79.8 70.3.


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