IPD04N03LA

IPD04N03LA IPU04N03LA OptiMOS®2 Power-Transistor Features Ideal for high-frequency dc/dc converters Qualified according to JEDEC for target applications N-channel Logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Superior thermal resistance 175 °C operating temperature dv /dt rated 1) Product Summary V DS R DS(on),max (SMD version) ID 25 3.8 50 V mΩ A P-TO252-3-11 P-TO251-3-21 Type IPD04N03LA IPU04N03LA Package P-TO252-3-11 P-TO251-3-21 Ordering Code Q67042-S4177 Q67042-S4198 Marking 04N03LA 04N03LA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) Value 50 50 350 890 6 ±20 Unit A I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C3) I D=40 A, R GS=25 Ω I D=50 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C mJ kV/µs V W °C T C=25 °C 115 -55 ... 175 55/175/56 J-STD20 and JESD22 Rev. 1.5 page 1 2004-02-04 IPD04N03LA IPU04N03LA Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area5) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshol...