IPS0551T

Data Sheet No. PD60160-A IPS0551T FULLY PROTECTED POWER MOSFET SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Product Summary Rds(on) V clamp Ishutdown 5.2mΩ (max) 40V 100A 4µs Description The IPS0551T is a fully protected three terminal SMART POWER MOSFET that features over-current, over-temperature, ESD protection, and drain to source active clamp. This device combines a HEXFET® POWER MOSFET and a gate driver. It offers full protection and high reliability required in harsh environments. The driver allows short switching times and provides efficient protection by turning OFF the power MOSFET when temperature exceeds 165oC or when the drain current reaches 100A. The device restarts once the input is cycled. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetizations. Ton/Toff Package SUPER TO220 SUPER SMD220 Advance Information Typical Connection L oad D IN c o n tro l R in s e r ie s ( if n e e d e d ) L o g ic s ig n a l S www.irf.com 1 IPS0551T Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to SOURCE lead. (TAmbient = 25oC unless otherwise specified). PCB mounting uses the standard footprint with 70 µm copper thickness. Symbol Parameter Vds Vin I+in Isd cont. Maximum drain to source voltage Maximum in...