IR2122S

Preliminary Data Sheet No. PD60130-J IR2122(S) CURRENT SENSING SINGLE CHANNEL DRIVER Features Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout 3.3V, 5V and 15V input logic compatible FAULT lead indicates shutdown has occured Output out of phase with input Product Summary VOFFSET IO+/VOUT VCSth ton/off (typ.) 600V max. 110 mA / 110 mA 10 - 20V 500 mV 250 & 200 ns Description The IR2122(S) is a high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL outputs, down to 3.3V. The protection circuity detects over-current in the driven power transistor and terminates the gate drive voltage. An open drain FAULT signal is provided to indicate that an over-current shutdown has occurred. The output driver features a high pulse current buffer stage designed for minimum cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side or low side configuration which operates up to 600 volts. Packages 8-Lead SOIC 8-Lead PDIP Typical Connection V CC IN FAULT V CC IN FAULT COM VB HO CS VS (Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections only. Please refer to our Application Notes an...