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Data Sheet No. PD-6.067B
IR51HD320
SELF-OSCILLATING HALF-BRIDGE
Features
n n n n n n n
Product Summary
VIN (max) Duty Cycle Deadtime RDS(on) PD (TA = 25 ºC) 400V 50% 1.2µs 1.8Ω 2.0W
Output Power MOSFETs in half-bridge configuration 400V Rated Breakdown Voltage High side gate drive designed for bootstrap operation Bootstrap diode integrated into package Accurate timing control for both Power MOSFETs Matched delay to get 50% duty cycle Matched deadtime of 1.2us Internal oscillator with programmable frequency 1 1. 4 × (RT + 75 Ω ) × CT Zener clamped Vcc for offline operation Half-bridge output is out of phase with RT
f =
Description
The IR51HD320 is a high voltage, high speed, selfoscillating half-bridge. Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET® power MOSFET technology, enable ruggedized single package construction. The front-end features a programmable oscillator which functions similar to the CMOS 555 timer. The supply to the control circuit has a zener clamp to simplify offline operation. The output features two HEXFETs in a half-bridge configuration with an internally set deadtime designed for minimum cross-conduction in the half-bridge. Propagation delays for the high and low side power MOSFETs are matched to simplify use in 50% duty cycle applications. The device can operate up to 400 volts.
Package
IR51HD320 9506
Typical Connection
U P TO 400V D C B U S V IN
IR 5 1 H D 3 2 0
1
V C C V B
6
2
R T V IN
9
R T 3
C T V O
7
C T 4
C O M
TO LO A D
C O M
To Order
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IR51HD320
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions.
Symbol
VIN VB VO VRT VCT ICC IRT dv/dt PD RθJA TJ TS TL
Parameter Definition
High Voltage Supply High Side Floating Supply Absolute Voltage Half-Bridge Output Voltage RT Voltage CT Voltage Supply Current (Note 1) RT Output Current Peak Diode Recovery dv/dt Package Power Dissipation @ TA ≤ +25ºC Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Lead Temperature (Soldering, 10 seconds)
Min.
-0.3 -0.3 -0.3 -0.3 -0.3 ---5 -------55 -55 ---
Max.
400 425 VIN + 0.3 VCC + 0.3 VCC + 0.3 25 5 4.0 2.00 60 150 150 300
Units
V
mA V/ns W ºC/W ºC
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions.
Symbol
VB VIN VO ID ICC TA Note 1:
Parameter Definition
High Side Floating Supply Absolute Voltage High Voltage Supply Half-Bridge Output Voltage Continuous Drain Current (TA = 25ºC) (TA = 85ºC) Supply Current (Note 1) Ambient Temperature
Min.
VO + 10 ---5 -------4.