IRCZ24

PD - 9.615A IRCZ24 HEXFET® Power MOSFET l l l l l l Dynamic dv/dt Rating Current Sense 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 55V RDS(on) = 0.040Ω ID = 26A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device, low on-resistance and cost-effectiveness. The HEXSence device provides an accurate fraction of the drain current through the additional two leads to be used for control or protection of the device. These devices exhibit similar electrical and thermal characteristics as their IRF-series equivalent part numbers. The provision of a kelvin source connection effectively eliminates problems of common source inductance when the HEXSence is used as a fast, high-current switch in non current-sensing applications. TO-220 HexSense Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ‚ Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or screw Max. 17 12 68 60 0.40 ±20 6.0 4.5 -55 to + 175 300 (1.6mm from case) 10 lbfin (1.1 Nm) Units A W W/°C V mJ A °C Thermal Resistance Parameter RθJC RθCS RθJA ...