IRF1310S

Previous Datasheet Index Next Data Sheet PD - 9.1221 IRF1310S HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SMD-220 is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The SMD-220 is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. VDSS = 100V RDS(on) = 0.04Ω ID = 41A SMD-220 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 25°C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation (PCB Mount)** Linear Derating Factor Linear Derating Factor (PCB Mount)** Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recove...