Power MOSFET. IRF240 Datasheet

IRF240 MOSFET. Datasheet pdf. Equivalent


Seme LAB IRF240
IRF240
MECHANICAL DATA
Dimensions in mm (inches)
40.01 (1.575)
Max.
22.23 (0.875)
Max.
1.09 (0.043)
0.97 (0.038)
Dia.
30.40 (1.197)
29.90 (1.177)
11.18 (0.440)
10.67 (0.420)
2
1
26.67
(1.050)
Max.
4.47 (0.176)
Rad.
2 Pls.
11.43 (0.450)
6.35 (0.250)
12.19 (0.48)
1.63 (0.064) 11.18 (0.44)
1.52 (0.060)
4.09 (0.161)
3.84 (0.151)
2 Pls
16.97 (0.668)
16.87 (0.664)
TO3 METAL PACKAGE
Pin 1 = Source Pin 2 Gate
N–CHANNEL
POWER MOSFET
FOR HI–REL
APPLICATIONS
VDSS
ID(cont)
RDS(on)
200V
18A
0.18W
FEATURES
• HERMETICALLY SEALED TO3 METAL
PACKAGE
• SIMPLE DRIVE REQUIREMENTS
• SCREENING OPTIONS AVAILABLE
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VGS Gate – Source Voltage
±20V
ID Continuous Drain Current @ Tcase = 25°C
18A
ID Continuous Drain Current @ Tcase = 100°C
11A
IDM Pulsed Drain Current
72A
PD Power Dissipation @ Tcase = 25°C
125W
Linear Derating Factor
1.0W/°C
TJ , Tstg
RqJC
RqJA
Operating and Storage Temperature Range
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
–55 to 150°C
1.0°C/W max.
30°C/W max.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 6/00


IRF240 Datasheet
Recommendation IRF240 Datasheet
Part IRF240
Description N-Channel Power MOSFET
Feature IRF240; IRF240 MECHANICAL DATA Dimensions in mm (inches) 40.01 (1.575) Max. 26.67 (1.050) Max. 4.47 (0.176.
Manufacture Seme LAB
Datasheet
Download IRF240 Datasheet




Seme LAB IRF240
IRF240
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
STATIC ELECTRICAL RATINGS
BVDSS Drain – Source Breakdown Voltage
DBVDSS Temperature Coefficient of
DTJ Breakdown Voltage
VGS = 0
ID = 1mA
Reference to 25°C
ID = 1mA
Static Drain – Source On–State
RDS(on) Resistance
VGS(th) Gate Threshold Voltage
gfs Forward Transconductance
VGS = 10V
VGS = 10V
VDS = VGS
VDS ³ 15V
ID = 11A
ID = 18A
ID = 250mA
IDS = 11A
IDSS Zero Gate Voltage Drain Current
VGS = 0
VDS = 0.8BVDSS
TJ = 125°C
IGSS Forward Gate – Source Leakage
VGS = 20V
IGSS Reverse Gate – Source Leakage
VGS = –20V
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance
VGS = 0
Coss Output Capacitance
VDS = 25V
Crss Reverse Transfer Capacitance
f = 1MHz
Qg Total Gate Charge
VGS = 10V
ID = 18A
VDS = 0.5BVDSS
Qgs Gate – Source Charge
ID = 18A
Qgd Gate – Drain (“Miller”) Charge
VDS = 0.5BVDSS
td(on)
tr
td(off)
tf
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
VDD = 100V
ID = 18A
RG = 9.1W
SOURCE – DRAIN DIODE CHARACTERISTICS
IS Continuous Source Current
ISM Pulse Source Current
VSD Diode Forward Voltage
IS = 18A
VGS = 0
TJ = 25°C
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 18A
TJ = 25°C
di / dt £ 100A/ms VDD £ 50V
PACKAGE CHARACTERISTICS
LD Internal Drain Inductance
(from 6mm down drain lead pad to centre of die)
LS Internal Source Inductance (from 6mm down source lead to centre of source bond pad)
200
2
6.1
32
2.2
14
Typ.
0.29
1300
400
130
5.0
13
Max. Unit
V
V/°C
0.18 W
0.21
4V
S((WW)
25 mA
250
100
-100
nA
pF
60 nC
10.6
nC
38
20
152
ns
58
67
18
A
72
1.5 V
500 ns
5.3 mC
nH
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 6/00







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)