Power MOSFET. IRF240 Datasheet

IRF240 MOSFET. Datasheet pdf. Equivalent


Intersil Corporation IRF240
Data Sheet
IRF240
March 1999 File Number 1584.3
18A, 200V, 0.180 Ohm, N-Channel
Power MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFETs designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17422.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF240
TO-204AE
IRF240
NOTE: When ordering, include the entire part number.
Features
• 18A, 200V
• rDS(ON) = 0.180
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
DRAIN
(FLANGE)
JEDEC TO-204AE
TOP VIEW
GATE (PIN 1)
SOURCE (PIN 2)
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999


IRF240 Datasheet
Recommendation IRF240 Datasheet
Part IRF240
Description N-Channel Power MOSFET
Feature IRF240; IRF240 Data Sheet March 1999 File Number 1584.3 18A, 200V, 0.180 Ohm, N-Channel Power MOSFET This N.
Manufacture Intersil Corporation
Datasheet
Download IRF240 Datasheet




Intersil Corporation IRF240
IRF240
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
IRF240
200
200
18
11
72
±20
125
1.0
580
-55 to 150
300
260
UNITS
V
V
A
A
A
V
W
W/oC
mJ
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage
Drain to Source On Resistance
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse-Transfer Capacitance
Internal Drain Inductance
BVDSS VGS = 0V, ID = 250µA (Figure 10)
200 -
-
VGS(TH) VGS = VDS, ID = 250µA
2.0 - 4.0
IDSS VDS = Rated BVDSS, VGS = 0V
- - 25
VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC - - 250
ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V
18 -
-
IGSS VGS = ±20V
- - ±100
rDS(ON) VGS = 10V, ID = 10A (Figures 8, 9)
- 0.14 0.180
gfs VDS = 10V, ID = 11V (Figure 12)
6.7 9.0
-
tD(ON)
tr
tD(OFF)
VDD = 100V, ID 18A, RG = 9.1, RL = 5.3
(Figures 17, 18) MOSFET Switching Times are
Essentially Independent of Operating Temperature
- 16 30
- 27 60
- 40 80
tf - 31 60
Qg VGS = 10V, ID = 18A, VDS = 0.8 x Rated BVDSS,
-
Ig(REF) = 1.5mA (Figures 14, 19, 20) Gate Charge is
Qgs Essentially Independent of Operating Temperature
-
43 60
8-
Qgd - 27 -
CISS VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11)
- 1275 -
COSS
- 500 -
CRSS
- 160 -
LD Measured between the Modified MOSFET
Contact Screw on Header Symbol Showing the
that is Closer to Source Internal Devices
and Gate Pins and Center Inductances
of Die
D
- 5.0 -
V
V
µA
µA
A
nA
S
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
nH
Internal Source Inductance
LS Measured from the
Source Lead, 6mm
(0.25in) from Header to
Source Bonding Pad
G
LD
LS
- 12.5 -
nH
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
RθJC
RθJA
Free Air Operation
S
- - 1.0 oC/W
- - 30 oC/W
2



Intersil Corporation IRF240
IRF240
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
SYMBOL
TEST CONDITIONS
ISD Modified MOSFET
ISM
Symbol Showing the
Integral Reverse P-N
Junction Diode
G
D
MIN TYP MAX UNITS
-
- 18
A
-
- 72
A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovered Charge
VSD
trr
QRR
TJ = 25oC, ISD = 18A, VGS = 0V (Figure 13)
TJ = 150oC, ISD = 18A, dISD/dt = 100A/µs
TJ = 150oC, ISD = 18A, dISD/dt = 100A/µs
--
- 650
- 4.1
NOTES:
2. Pulse Test: Pulse width 300µs, duty cycle 2%.
3. Repetitive Rating: Pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 2.7mH, RG = 25, peak IAS = 9A. See Figures 15 and 16.
2.0
-
-
V
ns
µC
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0 50 100
TC, CASE TEMPERATURE (oC)
150
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
20
16
12
8
4
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1.0
0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
10-5
10-4
10-3
10-2
0.1
t1, RECTANGULAR PULSE DURATION (s)
PDM
t1
t2 t2
NOTES:
DUTY FACTOR: D = t1/t2
PER UNIT BASE =
RTθJJMC-=T1C.0=oPCDWM x ZθJC (t)
1
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
10
3







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